Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties

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6 Citations (Scopus)

Abstract

Different Miller-indices Si crystal planes covered with thermally grown SiO2 layer were heat treated in CO containing ambient for several hours. Our group has been demonstrated that this process resulting nanometre sized SiC crystallites at the Si side of the Si/SiO2 interface. Low voltage scanning electron microscopy was used to obtain information about the microstructure of the system. Size, morphology and nucleation density of the SiC nanocrystals have been found to depend strongly on the orientation of the substrates. Comparing the (110) plane with the other crystal planes the typical grain size is smaller and the nucleation density is one order of magnitude higher.

Original languageEnglish
Title of host publicationProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
Pages133-136
Number of pages4
DOIs
Publication statusPublished - Mar 1 2006
EventICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
Duration: Jul 3 2005Jul 8 2005

Publication series

NameJournal De Physique. IV : JP
Volume132
ISSN (Print)1155-4339
ISSN (Electronic)1764-7177

Other

OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
CountryFrance
CityAix-en-Provence
Period7/3/057/8/05

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Pongrácz, A., Battistig, G., Tóth, A. L., Makkai, Z., Dücsö, C., Josepovits, K. V., & Bársony, I. (2006). Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties. In Proceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces (pp. 133-136). (Journal De Physique. IV : JP; Vol. 132). https://doi.org/10.1051/jp4:2006132026