Nucleation and growth modes of ALD ZnO

Zsófia Baji, Zoltán Lábadi, Zsolt E. Horváth, György Molnár, János Volk, István Bársony, Péter Barna

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The initial phases of the ALD growth of ZnO have been examined. It is shown that ZnO exhibits an island-like growth on Si, layer-by-layer on GaN, whereas on sapphire, the growth mode can be tuned by the deposition temperature. A new method for depositing ultrathin smooth polycrystalline films is presented. The growth rates on different substrates and at different deposition temperatures were analyzed, and the possibility of epitaxial growth was also examined.

Original languageEnglish
Pages (from-to)5615-5620
Number of pages6
JournalCrystal Growth and Design
Volume12
Issue number11
DOIs
Publication statusPublished - Nov 7 2012

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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