Nuclear microprobe application to semiconductor process development: Silicide formation and multi-layered structure

M. Takai, Y. Katayama, T. Lohner, A. Kinomura, H. Ryssel, P. H. Tsien, E. Burte, M. Satou, A. Chayahara

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Abstract

A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.

Original languageEnglish
Pages (from-to)357-365
Number of pages9
JournalRadiation Effects and Defects in Solids
Volume127
Issue number3-4
DOIs
Publication statusPublished - Jan 1 1994

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Keywords

  • RBS tomography
  • ion beam mixing
  • multilayer structure
  • nuclear microprobe
  • semiconductor
  • silicide formation

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics

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