Nuclear microprobe application to semiconductor process development

Silicide formation and multi-layered structure

M. Takai, Y. Katayama, T. Lohner, A. Kinomura, H. Ryssel, P. H. Tsien, E. Burte, M. Satou, A. Chayahara

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.

Original languageEnglish
Pages (from-to)357-365
Number of pages9
JournalRadiation Effects and Defects in Solids
Volume127
Issue number3-4
DOIs
Publication statusPublished - 1994

Fingerprint

Rutherford backscattering spectroscopy
Cobalt
Ion beams
backscattering
cobalt
ion beams
Semiconductor materials
Silicon
Masks
Kinematics
masks
kinematics
Atoms
shift
silicon
atoms
energy

Keywords

  • ion beam mixing
  • multilayer structure
  • nuclear microprobe
  • RBS tomography
  • semiconductor
  • silicide formation

ASJC Scopus subject areas

  • Materials Science(all)
  • Nuclear and High Energy Physics
  • Radiation
  • Condensed Matter Physics
  • Nuclear Energy and Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Nuclear microprobe application to semiconductor process development : Silicide formation and multi-layered structure. / Takai, M.; Katayama, Y.; Lohner, T.; Kinomura, A.; Ryssel, H.; Tsien, P. H.; Burte, E.; Satou, M.; Chayahara, A.

In: Radiation Effects and Defects in Solids, Vol. 127, No. 3-4, 1994, p. 357-365.

Research output: Contribution to journalArticle

Takai, M. ; Katayama, Y. ; Lohner, T. ; Kinomura, A. ; Ryssel, H. ; Tsien, P. H. ; Burte, E. ; Satou, M. ; Chayahara, A. / Nuclear microprobe application to semiconductor process development : Silicide formation and multi-layered structure. In: Radiation Effects and Defects in Solids. 1994 ; Vol. 127, No. 3-4. pp. 357-365.
@article{3194e0a71e304cb8a4443e2bf7a93811,
title = "Nuclear microprobe application to semiconductor process development: Silicide formation and multi-layered structure",
abstract = "A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.",
keywords = "ion beam mixing, multilayer structure, nuclear microprobe, RBS tomography, semiconductor, silicide formation",
author = "M. Takai and Y. Katayama and T. Lohner and A. Kinomura and H. Ryssel and Tsien, {P. H.} and E. Burte and M. Satou and A. Chayahara",
year = "1994",
doi = "10.1080/10420159408221044",
language = "English",
volume = "127",
pages = "357--365",
journal = "Radiation Effects and Defects in Solids",
issn = "1042-0150",
publisher = "Taylor and Francis Ltd.",
number = "3-4",

}

TY - JOUR

T1 - Nuclear microprobe application to semiconductor process development

T2 - Silicide formation and multi-layered structure

AU - Takai, M.

AU - Katayama, Y.

AU - Lohner, T.

AU - Kinomura, A.

AU - Ryssel, H.

AU - Tsien, P. H.

AU - Burte, E.

AU - Satou, M.

AU - Chayahara, A.

PY - 1994

Y1 - 1994

N2 - A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.

AB - A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi-layered structure. Lateral overgrowth of cobalt silicide layers on silicon was found to be suppressed by an additional ion beam mixing process, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deformation was easily corrected by simple data processing.

KW - ion beam mixing

KW - multilayer structure

KW - nuclear microprobe

KW - RBS tomography

KW - semiconductor

KW - silicide formation

UR - http://www.scopus.com/inward/record.url?scp=0028201586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028201586&partnerID=8YFLogxK

U2 - 10.1080/10420159408221044

DO - 10.1080/10420159408221044

M3 - Article

VL - 127

SP - 357

EP - 365

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

SN - 1042-0150

IS - 3-4

ER -