l25Te nuclear spin relaxation (NSR) and electrical conducvitiy measurements were performed on single-crystalline paratellurite (a-Te02) between room temperature and the melting point (1007K) at various oxygen partial pressures. A defect model is developed which fits the experimental data. The model involves ionic oxgyen interstitials (Oj̏), doubly charged oxygen vacancies (v̏o) and charge-compensating electron holes (h*). The pressure dependence suggests that the NSR rate is induced by the motion of vowhile the conductivity is due to diffusion of h*. Further, the chemical diffusion coefficient is shown to be caused by ambipolar diffusion of Oj” and h*.
- nuclear spin relaxation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Materials Science(all)
- Condensed Matter Physics