Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry

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12 Citations (Scopus)

Abstract

Four-parameter fitting of multiple-angle-of-incidence (MAI) ellipsometry data is developed to characterize near-surface layers on semiconductors damaged by implantation. We used coupled half-Gaussians to describe the damage depth profiles. The method was tested on Ge-implanted silicon layers (at a wavelength of 632.8 nm) and was cross-checked with high depth resolution RBS and channeling.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume55
Issue number1-4
DOIs
Publication statusPublished - Apr 2 1991

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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