Non-exponential resistive switching in Ag2S memristors: A key to nanometer-scale non-volatile memory devices

Agnes Gubicza, Miklós Csontos, A. Halbritter, G. Mihály

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels. This journal is

Original languageEnglish
Pages (from-to)4394-4399
Number of pages6
JournalNanoscale
Volume7
Issue number10
DOIs
Publication statusPublished - Mar 14 2015

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Memristors
Data storage equipment
Bias voltage
Durability
Computer simulation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Non-exponential resistive switching in Ag2S memristors : A key to nanometer-scale non-volatile memory devices. / Gubicza, Agnes; Csontos, Miklós; Halbritter, A.; Mihály, G.

In: Nanoscale, Vol. 7, No. 10, 14.03.2015, p. 4394-4399.

Research output: Contribution to journalArticle

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