Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties

Nikolay G. Galkin, Konstantin N. Galkin, Dmitrii L. Goroshko, Igor M. Chernev, Alexander V. Shevlyagin, L. Dózsa, Z. Osváth, B. Pécz

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Abstract

Thin (45-50 nm) non-doped and doped (by Sb and Al) polycrystalline Mg stannide films consisting mainly of Mg2Sn semiconductor phase and containing small quantity of Mg2Si phase have been grown by multiple layer deposition at room temperature and single step annealing at 150 °C of the (Sn-Mg) bi-layers on Si(111) n-type wafers with 7.5φ·cm resistivity. Optical spectroscopy data have shown that the grown Mg stannide films is a semiconductor with direct band gap of 0.17 ± 0.03 eV, with second and third direct interband transitions at 0.34 ± 0.02 and 0.45 ± 0.04 eV. An undispersed refraction index: n0 = 3.78 ± 0.06 was calculated from phonon energy dependence of the refraction index of the grown films in the 0.12-0.20 eV energy range. Temperatures dependent Hall effect measurements have revealed about 0.28 eV electrical band gap value in the films.

Original languageEnglish
Article number07JC06
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume54
Issue number7
DOIs
Publication statusPublished - Jul 1 2015

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Electric properties
Optical properties
electrical properties
optical properties
Substrates
Refraction
refraction
Energy gap
Semiconductor materials
Hall effect
wafers
Annealing
Temperature
electrical resistivity
annealing
energy
room temperature
spectroscopy
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Non-doped and doped Mg stannide films on Si(111) substrates : Formation, optical, and electrical properties. / Galkin, Nikolay G.; Galkin, Konstantin N.; Goroshko, Dmitrii L.; Chernev, Igor M.; Shevlyagin, Alexander V.; Dózsa, L.; Osváth, Z.; Pécz, B.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 54, No. 7, 07JC06, 01.07.2015.

Research output: Contribution to journalArticle

@article{5d6097e63e3d4879845cf82af76b475c,
title = "Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties",
abstract = "Thin (45-50 nm) non-doped and doped (by Sb and Al) polycrystalline Mg stannide films consisting mainly of Mg2Sn semiconductor phase and containing small quantity of Mg2Si phase have been grown by multiple layer deposition at room temperature and single step annealing at 150 °C of the (Sn-Mg) bi-layers on Si(111) n-type wafers with 7.5φ·cm resistivity. Optical spectroscopy data have shown that the grown Mg stannide films is a semiconductor with direct band gap of 0.17 ± 0.03 eV, with second and third direct interband transitions at 0.34 ± 0.02 and 0.45 ± 0.04 eV. An undispersed refraction index: n0 = 3.78 ± 0.06 was calculated from phonon energy dependence of the refraction index of the grown films in the 0.12-0.20 eV energy range. Temperatures dependent Hall effect measurements have revealed about 0.28 eV electrical band gap value in the films.",
author = "Galkin, {Nikolay G.} and Galkin, {Konstantin N.} and Goroshko, {Dmitrii L.} and Chernev, {Igor M.} and Shevlyagin, {Alexander V.} and L. D{\'o}zsa and Z. Osv{\'a}th and B. P{\'e}cz",
year = "2015",
month = "7",
day = "1",
doi = "10.7567/JJAP.54.07JC06",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Non-doped and doped Mg stannide films on Si(111) substrates

T2 - Formation, optical, and electrical properties

AU - Galkin, Nikolay G.

AU - Galkin, Konstantin N.

AU - Goroshko, Dmitrii L.

AU - Chernev, Igor M.

AU - Shevlyagin, Alexander V.

AU - Dózsa, L.

AU - Osváth, Z.

AU - Pécz, B.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Thin (45-50 nm) non-doped and doped (by Sb and Al) polycrystalline Mg stannide films consisting mainly of Mg2Sn semiconductor phase and containing small quantity of Mg2Si phase have been grown by multiple layer deposition at room temperature and single step annealing at 150 °C of the (Sn-Mg) bi-layers on Si(111) n-type wafers with 7.5φ·cm resistivity. Optical spectroscopy data have shown that the grown Mg stannide films is a semiconductor with direct band gap of 0.17 ± 0.03 eV, with second and third direct interband transitions at 0.34 ± 0.02 and 0.45 ± 0.04 eV. An undispersed refraction index: n0 = 3.78 ± 0.06 was calculated from phonon energy dependence of the refraction index of the grown films in the 0.12-0.20 eV energy range. Temperatures dependent Hall effect measurements have revealed about 0.28 eV electrical band gap value in the films.

AB - Thin (45-50 nm) non-doped and doped (by Sb and Al) polycrystalline Mg stannide films consisting mainly of Mg2Sn semiconductor phase and containing small quantity of Mg2Si phase have been grown by multiple layer deposition at room temperature and single step annealing at 150 °C of the (Sn-Mg) bi-layers on Si(111) n-type wafers with 7.5φ·cm resistivity. Optical spectroscopy data have shown that the grown Mg stannide films is a semiconductor with direct band gap of 0.17 ± 0.03 eV, with second and third direct interband transitions at 0.34 ± 0.02 and 0.45 ± 0.04 eV. An undispersed refraction index: n0 = 3.78 ± 0.06 was calculated from phonon energy dependence of the refraction index of the grown films in the 0.12-0.20 eV energy range. Temperatures dependent Hall effect measurements have revealed about 0.28 eV electrical band gap value in the films.

UR - http://www.scopus.com/inward/record.url?scp=84936751827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936751827&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.07JC06

DO - 10.7567/JJAP.54.07JC06

M3 - Article

AN - SCOPUS:84936751827

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7

M1 - 07JC06

ER -