Non-destructive characterization of strontium bismuth tantalate films

P. Petrik, N. Q. Khánh, Z. Horváth, Z. Zolnai, I. Bársony, T. Lohner, M. Fried, J. Gyulai, C. Schmidt, C. Schneider, H. Ryssel

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Optical, compositional, and structural properties of strontium bismuth tantalate (SBT) films deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic precursors were characterized using three non-destructive techniques, spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry (RBS), and X-ray diffraction (XRD). The thicknesses and the refractive indices of the SBT layers were calculated with SE using different parametric dielectric function models. The samples were characterized with RBS using different tilt angles and probe ions to enhance the depth resolution and the mass separation. Comparison with SE measurements supports the results of Bahng et al. revealing an increasing refractive index (n) with increasing Bi/Sr ratio. The decreasing grain size measured by XRD was reflected as a decrease of n in the SE measurement. We show that RBS, XRD, and SE supply a wide range of information about the SBT layers, which can be used for qualification as well as for feedback to layer production. The results suggest that by SE, being used as in situ or in line characterization tool, the control of even complex MOCVD deposition looks feasible.

Original languageEnglish
Pages (from-to)141-145
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume5
Issue number2-3
DOIs
Publication statusPublished - Apr 2002

Fingerprint

Bismuth
Strontium
Spectroscopic ellipsometry
strontium
bismuth
ellipsometry
Rutherford backscattering spectroscopy
Spectrometry
backscattering
X ray diffraction
Refractive index
diffraction
refractivity
ion probes
Low pressure chemical vapor deposition
qualifications
Metallorganic chemical vapor deposition
liquid metals
Liquid metals
x ray spectroscopy

Keywords

  • Metal-organic chemical vapor deposition
  • Rutherford backscattering spectroscopy
  • Spectroscopic ellipsometry
  • Strontium bismuth tantalate
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Non-destructive characterization of strontium bismuth tantalate films. / Petrik, P.; Khánh, N. Q.; Horváth, Z.; Zolnai, Z.; Bársony, I.; Lohner, T.; Fried, M.; Gyulai, J.; Schmidt, C.; Schneider, C.; Ryssel, H.

In: Materials Science in Semiconductor Processing, Vol. 5, No. 2-3, 04.2002, p. 141-145.

Research output: Contribution to journalArticle

@article{a30ef35db6b148f9849ee88e9d713b46,
title = "Non-destructive characterization of strontium bismuth tantalate films",
abstract = "Optical, compositional, and structural properties of strontium bismuth tantalate (SBT) films deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic precursors were characterized using three non-destructive techniques, spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry (RBS), and X-ray diffraction (XRD). The thicknesses and the refractive indices of the SBT layers were calculated with SE using different parametric dielectric function models. The samples were characterized with RBS using different tilt angles and probe ions to enhance the depth resolution and the mass separation. Comparison with SE measurements supports the results of Bahng et al. revealing an increasing refractive index (n) with increasing Bi/Sr ratio. The decreasing grain size measured by XRD was reflected as a decrease of n in the SE measurement. We show that RBS, XRD, and SE supply a wide range of information about the SBT layers, which can be used for qualification as well as for feedback to layer production. The results suggest that by SE, being used as in situ or in line characterization tool, the control of even complex MOCVD deposition looks feasible.",
keywords = "Metal-organic chemical vapor deposition, Rutherford backscattering spectroscopy, Spectroscopic ellipsometry, Strontium bismuth tantalate, X-ray diffraction",
author = "P. Petrik and Kh{\'a}nh, {N. Q.} and Z. Horv{\'a}th and Z. Zolnai and I. B{\'a}rsony and T. Lohner and M. Fried and J. Gyulai and C. Schmidt and C. Schneider and H. Ryssel",
year = "2002",
month = "4",
doi = "10.1016/S1369-8001(02)00095-1",
language = "English",
volume = "5",
pages = "141--145",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "2-3",

}

TY - JOUR

T1 - Non-destructive characterization of strontium bismuth tantalate films

AU - Petrik, P.

AU - Khánh, N. Q.

AU - Horváth, Z.

AU - Zolnai, Z.

AU - Bársony, I.

AU - Lohner, T.

AU - Fried, M.

AU - Gyulai, J.

AU - Schmidt, C.

AU - Schneider, C.

AU - Ryssel, H.

PY - 2002/4

Y1 - 2002/4

N2 - Optical, compositional, and structural properties of strontium bismuth tantalate (SBT) films deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic precursors were characterized using three non-destructive techniques, spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry (RBS), and X-ray diffraction (XRD). The thicknesses and the refractive indices of the SBT layers were calculated with SE using different parametric dielectric function models. The samples were characterized with RBS using different tilt angles and probe ions to enhance the depth resolution and the mass separation. Comparison with SE measurements supports the results of Bahng et al. revealing an increasing refractive index (n) with increasing Bi/Sr ratio. The decreasing grain size measured by XRD was reflected as a decrease of n in the SE measurement. We show that RBS, XRD, and SE supply a wide range of information about the SBT layers, which can be used for qualification as well as for feedback to layer production. The results suggest that by SE, being used as in situ or in line characterization tool, the control of even complex MOCVD deposition looks feasible.

AB - Optical, compositional, and structural properties of strontium bismuth tantalate (SBT) films deposited in a high throughput low-pressure chemical vapor deposition reactor using liquid metal-organic precursors were characterized using three non-destructive techniques, spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry (RBS), and X-ray diffraction (XRD). The thicknesses and the refractive indices of the SBT layers were calculated with SE using different parametric dielectric function models. The samples were characterized with RBS using different tilt angles and probe ions to enhance the depth resolution and the mass separation. Comparison with SE measurements supports the results of Bahng et al. revealing an increasing refractive index (n) with increasing Bi/Sr ratio. The decreasing grain size measured by XRD was reflected as a decrease of n in the SE measurement. We show that RBS, XRD, and SE supply a wide range of information about the SBT layers, which can be used for qualification as well as for feedback to layer production. The results suggest that by SE, being used as in situ or in line characterization tool, the control of even complex MOCVD deposition looks feasible.

KW - Metal-organic chemical vapor deposition

KW - Rutherford backscattering spectroscopy

KW - Spectroscopic ellipsometry

KW - Strontium bismuth tantalate

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0036557724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036557724&partnerID=8YFLogxK

U2 - 10.1016/S1369-8001(02)00095-1

DO - 10.1016/S1369-8001(02)00095-1

M3 - Article

AN - SCOPUS:0036557724

VL - 5

SP - 141

EP - 145

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 2-3

ER -