Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry

M. Fried, T. Lohner, J. M M De Nijs, A. Van Silfhout, L. J. Hanekamp, N. Q. Khanh, Z. Laczik, J. Gyulai

Research output: Contribution to journalArticle

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Abstract

Silicon-on-insulator (SOI) structures implanted with 200 or 400 keV N+ ions at a dose of 7.5 × 1017 cm-2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models and linear regression analysis. We applied a seven-layer model (a surface oxide layer, a thick silicon layer, upper two interface layers, a thick nitride layer and lower two interface layers) with good results. The fitted parameters were the layer thickness and compositions. The results were compared with data obtained from Rutherford backscattering spectroscopy (RBS) and transmission electron microscopy. The sensitivity of our optical model and fitting technique was good enough to distinguish between the silicon-rich transition layers near the upper and lower interfaces of the nitride layer, which are unresolvable in RBS measurements.

Original languageEnglish
Pages (from-to)131-137
Number of pages7
JournalMaterials Science and Engineering B
Volume2
Issue number1-3
DOIs
Publication statusPublished - 1989

Fingerprint

Spectroscopic ellipsometry
Silicon
ellipsometry
Nitrogen
Rutherford backscattering spectroscopy
insulators
nitrogen
Nitrides
silicon
Linear regression
Regression analysis
Oxides
Photons
Ions
Transmission electron microscopy
nitrides
Wavelength
backscattering
Chemical analysis
transition layers

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Engineering(all)

Cite this

Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry. / Fried, M.; Lohner, T.; De Nijs, J. M M; Van Silfhout, A.; Hanekamp, L. J.; Khanh, N. Q.; Laczik, Z.; Gyulai, J.

In: Materials Science and Engineering B, Vol. 2, No. 1-3, 1989, p. 131-137.

Research output: Contribution to journalArticle

Fried, M. ; Lohner, T. ; De Nijs, J. M M ; Van Silfhout, A. ; Hanekamp, L. J. ; Khanh, N. Q. ; Laczik, Z. ; Gyulai, J. / Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry. In: Materials Science and Engineering B. 1989 ; Vol. 2, No. 1-3. pp. 131-137.
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AU - Hanekamp, L. J.

AU - Khanh, N. Q.

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