Noise in piezoresistive Si pressure sensors

Béla Szentpáli, Maria Ádám, Tibor Mohácsy

Research output: Contribution to journalConference article

3 Citations (Scopus)


The principles of the construction of piezoresistive silicone pressure sensors are outlined. The fabrication of sensors with ion-implantation and common silicone wafer technology is described. The simulation of the devices showed that the membrane thickness has a major influence on the sensitivity, while the misalignment is less important. The low-frequency noise spectra of the piezoresistive elements are Lorenzian; the characteristic time constant is about 23 μs. The bias dependence of the spectra is in some degree less than it was expected from the regular V2 scaling. The plateau of the noise spectrum at working conditions is higher with almost 30 dB than the thermal noise. This excess noise is attributed to a trap level; however the origin of this G-R center is not clear yet. The figures of merits of the sensor were also estimated in numerical examples.

Original languageEnglish
Article number23
Pages (from-to)169-179
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Dec 12 2005
EventNoise and Information in Nanoelectronics, Sensors, and Standards III - Austin, TX, United States
Duration: May 24 2005May 26 2005



  • Force-sensor
  • Generation-recombination
  • Noise
  • Piezoresistance
  • Pressure-sensor
  • Si

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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