Ni short- circuit diffusion in alumina

I. Vallasek, G. Erdélyi, G. Langer, I. Gödény, D. L. Beke

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Ni tracer diffusion was studied along (0001) direction in high purity sapphire single crystals and in polycrystalline alumina using precision mechanical sectioning technique. Residual β-activity measurement with low background were carried out under vacuum, the tail parts of the penetration plots were analysed in terms of the LeClaire-Rabinovitch and in terms of the Whipple-Le Claire models. Ni dislocation and grain boundary diffusivities are given in the temperature range of 1373-1873 K.

Original languageEnglish
Pages (from-to)1033-1038
Number of pages6
JournalDefect and Diffusion Forum
Issue number194-199 PART 2
DOIs
Publication statusPublished - Jan 1 2001

Keywords

  • Dislocation Diffusion
  • Grain Boundary Diffusion
  • Polycrystalline Alumina
  • Sapphire

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Ni short- circuit diffusion in alumina'. Together they form a unique fingerprint.

  • Cite this