New type of photo-induced photoluminescence fatigue in glassy GeSe2

V. A. Vassilyev, M. Koós, I. Kósa Somogyi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A new type of photo-induced photoluminescence (PL) fatigue in glassy semiconductors of the system GeSe in the temperature range 80-300 K has been observed. The duration of this effect tf is less than 30 s and it varies with temperature and the energy of exciting light quanta Eex. After fatigue the intensity of PL returns to its original value if the sample is kept in the dark. The time of complete restoration is τo ≥ 20 s and depends on temperature. The results are interpreted by comparing the probabilities of radiative and non-radiative transitions of quasi-excitons formed during irradiation.

Original languageEnglish
Pages (from-to)613-616
Number of pages4
JournalSolid State Communications
Volume28
Issue number8
DOIs
Publication statusPublished - Nov 1978

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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