New type of defects explored by theory: Silicon interstitial clusters in SiC

A. Gali, T. Hornos, N. T. Son, E. Janzén

Research output: Contribution to journalConference article

Abstract

We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and ionization energies were also calculated in order to help the identification of the defects. We propose that silicon interstitials can emit from these clusters at relatively high temperatures, which may play an important role in the formation of the D I center.

Original languageEnglish
Pages (from-to)413-416
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - Apr 10 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Keywords

  • Interstitials
  • Local vibrational modes
  • Photoluminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'New type of defects explored by theory: Silicon interstitial clusters in SiC'. Together they form a unique fingerprint.

  • Cite this