New trends in non-volatile semiconductor memories

Zsolt J. Horváth, Péter Basa

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The construction and the physical background of operation of floating gate, nanocrystal, silicon nitride-based, phase-change, ferroelectric and magne-toresistive memories are breafly summarized.

Original languageEnglish
Title of host publicationTowards Intelligent Engineering and Information Technology
EditorsImre Rudas, Janos Fodor, Janusz Kacprzyk
Pages323-333
Number of pages11
DOIs
Publication statusPublished - Dec 1 2009

Publication series

NameStudies in Computational Intelligence
Volume243
ISSN (Print)1860-949X

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Keywords

  • FeRAMs
  • Flash memories
  • MRAMs
  • Nanocrystal memories
  • Phase-change memories
  • SONOS

ASJC Scopus subject areas

  • Artificial Intelligence

Cite this

Horváth, Z. J., & Basa, P. (2009). New trends in non-volatile semiconductor memories. In I. Rudas, J. Fodor, & J. Kacprzyk (Eds.), Towards Intelligent Engineering and Information Technology (pp. 323-333). (Studies in Computational Intelligence; Vol. 243). https://doi.org/10.1007/978-3-642-03737-5_23