New method to measure low Schottky barriers on n-type silicon

H. V. Suu, F. Pászti, G. Mezey, G. Pető, A. Manuaba, M. Fried, J. Gyulai

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To overcome difficulties which arise when either the series resistance is too high or the Schottky barrier height is too low, a new and simple method was developed to measure barrier height. Crucial point is the application of a]] one-sided" configuration. This method was successfully applied to the GdSi2 system, where φB =0.38±0.005 eV was measured.

Original languageEnglish
Pages (from-to)3537-3539
Number of pages3
JournalJournal of Applied Physics
Volume59
Issue number10
DOIs
Publication statusPublished - 1986

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silicon
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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

New method to measure low Schottky barriers on n-type silicon. / Suu, H. V.; Pászti, F.; Mezey, G.; Pető, G.; Manuaba, A.; Fried, M.; Gyulai, J.

In: Journal of Applied Physics, Vol. 59, No. 10, 1986, p. 3537-3539.

Research output: Contribution to journalArticle

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