New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC

F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm -2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5×1010 cm -2 proton and helium ion irradiation. New no phonon lines E 0, F0, θ0, Φ0, K 0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages411-414
Number of pages4
Volume645-648
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Helium
Ion bombardment
replicas
Protons
Luminescence
Electron beams
Electron microscopes
Carbon
Ions
dosage
Defects
protons
Electrons
helium ions
defects
ion irradiation
ions
electrons
electron microscopes
electron beams

Keywords

  • Di-carbon antisite defect
  • Electron
  • Harmonics
  • Helium ion
  • Irradiation
  • Lattice modes
  • Proton

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Yan, F., Devaty, R. P., Choyke, W. J., Kimoto, T., Ohshima, T., Pensl, G., & Gali, A. (2010). New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. In Materials Science Forum (Vol. 645-648, pp. 411-414). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.411

New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. / Yan, F.; Devaty, R. P.; Choyke, W. J.; Kimoto, T.; Ohshima, T.; Pensl, G.; Gali, A.

Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 411-414 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, F, Devaty, RP, Choyke, WJ, Kimoto, T, Ohshima, T, Pensl, G & Gali, A 2010, New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. in Materials Science Forum. vol. 645-648, Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 411-414, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.411
Yan F, Devaty RP, Choyke WJ, Kimoto T, Ohshima T, Pensl G et al. New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. In Materials Science Forum. Vol. 645-648. Trans Tech Publications Ltd. 2010. p. 411-414. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.411
Yan, F. ; Devaty, R. P. ; Choyke, W. J. ; Kimoto, T. ; Ohshima, T. ; Pensl, G. ; Gali, A. / New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. pp. 411-414 (Materials Science Forum).
@inproceedings{f6ff23165c35418ead9dc8d54a7ea6e7,
title = "New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC",
abstract = "In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm -2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5×1010 cm -2 proton and helium ion irradiation. New no phonon lines E 0, F0, θ0, Φ0, K 0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.",
keywords = "Di-carbon antisite defect, Electron, Harmonics, Helium ion, Irradiation, Lattice modes, Proton",
author = "F. Yan and Devaty, {R. P.} and Choyke, {W. J.} and T. Kimoto and T. Ohshima and G. Pensl and A. Gali",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.411",
language = "English",
isbn = "0878492798",
volume = "645-648",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "411--414",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC

AU - Yan, F.

AU - Devaty, R. P.

AU - Choyke, W. J.

AU - Kimoto, T.

AU - Ohshima, T.

AU - Pensl, G.

AU - Gali, A.

PY - 2010

Y1 - 2010

N2 - In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm -2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5×1010 cm -2 proton and helium ion irradiation. New no phonon lines E 0, F0, θ0, Φ0, K 0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

AB - In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm -2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5×1010 cm -2 proton and helium ion irradiation. New no phonon lines E 0, F0, θ0, Φ0, K 0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

KW - Di-carbon antisite defect

KW - Electron

KW - Harmonics

KW - Helium ion

KW - Irradiation

KW - Lattice modes

KW - Proton

UR - http://www.scopus.com/inward/record.url?scp=77955457410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955457410&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.645-648.411

DO - 10.4028/www.scientific.net/MSF.645-648.411

M3 - Conference contribution

AN - SCOPUS:77955457410

SN - 0878492798

SN - 9780878492794

VL - 645-648

T3 - Materials Science Forum

SP - 411

EP - 414

BT - Materials Science Forum

PB - Trans Tech Publications Ltd

ER -