Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts

Z. Horváth, I. Gyúró, M. Németh-Sallay, P. Tüttö

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Recently discrepancies were obtained between the barrier heights evaluated from the I-V and C-V measurements of Au/CrGaAs Schottky contacts and between the experimental and theoretical concentration dependences of the built-in potential obtained for the same devices. In this paper the possible causes of these discrepancies are analyzed. It is shown that the capacitance values at zero bias and the obtained built-in potentials are consistent with the concentrations evaluated from the C-V measurements of the finished contacts, but they are not consistent with the concentrations obtained on the eptitaxial layers before the device preparation by electrochemical C-V profiling. It is also shown that the above discrepancies may be explained by errors in the evaluation of the built-in potential. These errors are due to the concentration-dependent reduction of the electron concentration near the M-S interface. The possible mechanisms of the concentration reduction are outlined briefly.

Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalVacuum
Volume40
Issue number1-2
DOIs
Publication statusPublished - 1990

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electric contacts
Capacitance
Electrons
capacitance
preparation
evaluation
causes
electrons

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts. / Horváth, Z.; Gyúró, I.; Németh-Sallay, M.; Tüttö, P.

In: Vacuum, Vol. 40, No. 1-2, 1990, p. 201-203.

Research output: Contribution to journalArticle

Horváth, Z. ; Gyúró, I. ; Németh-Sallay, M. ; Tüttö, P. / Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts. In: Vacuum. 1990 ; Vol. 40, No. 1-2. pp. 201-203.
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