Nanostructured SiGe thin Films Obtained Through MIC Processing

M. Lindorf, H. Rohrmann, G. L. Katona, D. Beke, H. F. Pernau, M. Albrecht

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Silicon-germanium (SiGe) alloys are a well-known classic thermoelectric material used for high temperature applications. Recent thermoelectric research on SiGe alloys often focuses on a nanostructuring approach trying to increase its efficiency. This can be achieved by the introduction of grain boundaries and point defects, which effectively increase the scattering rate of phonons and thus reduce the lattice thermal conductivity. In this work, we present an approach to produce nanograinedSiGe thin films by means of sputter deposition and utilizing the effect of metal induced crystallization in a post annealing step. Samples were prepared in the form of Al/SiGemultilayers enabling control over both the lowered crystallization temperature and crystallite size of the SiGe by adjusting the Al interlayer thickness. Since parts of the Al are incorporated into the SiGe during crystallization, no additional efforts have to be made to reach sufficient doping levels. The microstructure of the samples was characterized using transmission electron microscopy, secondary neutral mass spectrometry, and x-ray diffraction. Measured transport properties include specific electrical resistance, Seebeck coefficient, and Hall carrier concentration.

Original languageEnglish
Title of host publicationMaterials Today: Proceedings
PublisherElsevier Ltd
Pages557-565
Number of pages9
Volume2
Edition2
DOIs
Publication statusPublished - 2015

Fingerprint

Germanium
Silicon
Crystallization
Thin films
Processing
Sputter deposition
Acoustic impedance
High temperature applications
Seebeck coefficient
Point defects
Phonons
Crystallite size
Transport properties
Carrier concentration
Mass spectrometry
Thermal conductivity
Grain boundaries
Diffraction
Metals
Doping (additives)

Keywords

  • Metal induced crystallization
  • Multilayers
  • Silicon-germanium
  • Thermoelectricity

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Lindorf, M., Rohrmann, H., Katona, G. L., Beke, D., Pernau, H. F., & Albrecht, M. (2015). Nanostructured SiGe thin Films Obtained Through MIC Processing. In Materials Today: Proceedings (2 ed., Vol. 2, pp. 557-565). Elsevier Ltd. https://doi.org/10.1016/j.matpr.2015.05.076

Nanostructured SiGe thin Films Obtained Through MIC Processing. / Lindorf, M.; Rohrmann, H.; Katona, G. L.; Beke, D.; Pernau, H. F.; Albrecht, M.

Materials Today: Proceedings. Vol. 2 2. ed. Elsevier Ltd, 2015. p. 557-565.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lindorf, M, Rohrmann, H, Katona, GL, Beke, D, Pernau, HF & Albrecht, M 2015, Nanostructured SiGe thin Films Obtained Through MIC Processing. in Materials Today: Proceedings. 2 edn, vol. 2, Elsevier Ltd, pp. 557-565. https://doi.org/10.1016/j.matpr.2015.05.076
Lindorf M, Rohrmann H, Katona GL, Beke D, Pernau HF, Albrecht M. Nanostructured SiGe thin Films Obtained Through MIC Processing. In Materials Today: Proceedings. 2 ed. Vol. 2. Elsevier Ltd. 2015. p. 557-565 https://doi.org/10.1016/j.matpr.2015.05.076
Lindorf, M. ; Rohrmann, H. ; Katona, G. L. ; Beke, D. ; Pernau, H. F. ; Albrecht, M. / Nanostructured SiGe thin Films Obtained Through MIC Processing. Materials Today: Proceedings. Vol. 2 2. ed. Elsevier Ltd, 2015. pp. 557-565
@inproceedings{618b3163133a45c9b63e81abff19f64e,
title = "Nanostructured SiGe thin Films Obtained Through MIC Processing",
abstract = "Silicon-germanium (SiGe) alloys are a well-known classic thermoelectric material used for high temperature applications. Recent thermoelectric research on SiGe alloys often focuses on a nanostructuring approach trying to increase its efficiency. This can be achieved by the introduction of grain boundaries and point defects, which effectively increase the scattering rate of phonons and thus reduce the lattice thermal conductivity. In this work, we present an approach to produce nanograinedSiGe thin films by means of sputter deposition and utilizing the effect of metal induced crystallization in a post annealing step. Samples were prepared in the form of Al/SiGemultilayers enabling control over both the lowered crystallization temperature and crystallite size of the SiGe by adjusting the Al interlayer thickness. Since parts of the Al are incorporated into the SiGe during crystallization, no additional efforts have to be made to reach sufficient doping levels. The microstructure of the samples was characterized using transmission electron microscopy, secondary neutral mass spectrometry, and x-ray diffraction. Measured transport properties include specific electrical resistance, Seebeck coefficient, and Hall carrier concentration.",
keywords = "Metal induced crystallization, Multilayers, Silicon-germanium, Thermoelectricity",
author = "M. Lindorf and H. Rohrmann and Katona, {G. L.} and D. Beke and Pernau, {H. F.} and M. Albrecht",
year = "2015",
doi = "10.1016/j.matpr.2015.05.076",
language = "English",
volume = "2",
pages = "557--565",
booktitle = "Materials Today: Proceedings",
publisher = "Elsevier Ltd",
edition = "2",

}

TY - GEN

T1 - Nanostructured SiGe thin Films Obtained Through MIC Processing

AU - Lindorf, M.

AU - Rohrmann, H.

AU - Katona, G. L.

AU - Beke, D.

AU - Pernau, H. F.

AU - Albrecht, M.

PY - 2015

Y1 - 2015

N2 - Silicon-germanium (SiGe) alloys are a well-known classic thermoelectric material used for high temperature applications. Recent thermoelectric research on SiGe alloys often focuses on a nanostructuring approach trying to increase its efficiency. This can be achieved by the introduction of grain boundaries and point defects, which effectively increase the scattering rate of phonons and thus reduce the lattice thermal conductivity. In this work, we present an approach to produce nanograinedSiGe thin films by means of sputter deposition and utilizing the effect of metal induced crystallization in a post annealing step. Samples were prepared in the form of Al/SiGemultilayers enabling control over both the lowered crystallization temperature and crystallite size of the SiGe by adjusting the Al interlayer thickness. Since parts of the Al are incorporated into the SiGe during crystallization, no additional efforts have to be made to reach sufficient doping levels. The microstructure of the samples was characterized using transmission electron microscopy, secondary neutral mass spectrometry, and x-ray diffraction. Measured transport properties include specific electrical resistance, Seebeck coefficient, and Hall carrier concentration.

AB - Silicon-germanium (SiGe) alloys are a well-known classic thermoelectric material used for high temperature applications. Recent thermoelectric research on SiGe alloys often focuses on a nanostructuring approach trying to increase its efficiency. This can be achieved by the introduction of grain boundaries and point defects, which effectively increase the scattering rate of phonons and thus reduce the lattice thermal conductivity. In this work, we present an approach to produce nanograinedSiGe thin films by means of sputter deposition and utilizing the effect of metal induced crystallization in a post annealing step. Samples were prepared in the form of Al/SiGemultilayers enabling control over both the lowered crystallization temperature and crystallite size of the SiGe by adjusting the Al interlayer thickness. Since parts of the Al are incorporated into the SiGe during crystallization, no additional efforts have to be made to reach sufficient doping levels. The microstructure of the samples was characterized using transmission electron microscopy, secondary neutral mass spectrometry, and x-ray diffraction. Measured transport properties include specific electrical resistance, Seebeck coefficient, and Hall carrier concentration.

KW - Metal induced crystallization

KW - Multilayers

KW - Silicon-germanium

KW - Thermoelectricity

UR - http://www.scopus.com/inward/record.url?scp=84947709593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947709593&partnerID=8YFLogxK

U2 - 10.1016/j.matpr.2015.05.076

DO - 10.1016/j.matpr.2015.05.076

M3 - Conference contribution

AN - SCOPUS:84947709593

VL - 2

SP - 557

EP - 565

BT - Materials Today: Proceedings

PB - Elsevier Ltd

ER -