Nanoscale investigations of shift of individual interfaces in temperature induced processes of Ni-Si system by secondary neutral mass spectrometry

A. Lakatos, G. Langer, A. Csík, C. Cserháti, M. Kis-Varga, L. Daróczi, G. L. Katona, Z. Erdélyi, G. Erdelyi, K. Vad, D. Beke

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Abstract

We describe a method for measurement of nanoscale shift of interfaces in layered systems by a combination of secondary neutral mass spectrometry and profilometer. We demonstrate it by the example of the investigation of interface shifts during the solid state reaction in Ni/amorphous-Si system. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the amorphous Si layer as well as the average growth kinetics of the product phases were determined at 503 K. The results show that nanoscale resolution can be reached and the method is promising for following solid state reactions in different thin film systems.

Original languageEnglish
Article number233103
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
Publication statusPublished - Dec 6 2010

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mass spectroscopy
solid state
profilometers
shift
kinetics
shrinkage
temperature
products
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We describe a method for measurement of nanoscale shift of interfaces in layered systems by a combination of secondary neutral mass spectrometry and profilometer. We demonstrate it by the example of the investigation of interface shifts during the solid state reaction in Ni/amorphous-Si system. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the amorphous Si layer as well as the average growth kinetics of the product phases were determined at 503 K. The results show that nanoscale resolution can be reached and the method is promising for following solid state reactions in different thin film systems.",
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T1 - Nanoscale investigations of shift of individual interfaces in temperature induced processes of Ni-Si system by secondary neutral mass spectrometry

AU - Lakatos, A.

AU - Langer, G.

AU - Csík, A.

AU - Cserháti, C.

AU - Kis-Varga, M.

AU - Daróczi, L.

AU - Katona, G. L.

AU - Erdélyi, Z.

AU - Erdelyi, G.

AU - Vad, K.

AU - Beke, D.

PY - 2010/12/6

Y1 - 2010/12/6

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AB - We describe a method for measurement of nanoscale shift of interfaces in layered systems by a combination of secondary neutral mass spectrometry and profilometer. We demonstrate it by the example of the investigation of interface shifts during the solid state reaction in Ni/amorphous-Si system. The kinetics of the shrinkage of the initial nanocrystalline Ni film and the amorphous Si layer as well as the average growth kinetics of the product phases were determined at 503 K. The results show that nanoscale resolution can be reached and the method is promising for following solid state reactions in different thin film systems.

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