Nanoscale in-depth modification of Cr-O-Si layers

I. Bertóti, A. Tóth, M. Mohai, R. Kelly, G. Marletta, M. Farkas-Jahnke

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Abstract

In-depth modification of Cr-O-Si layers on a nanoscale has been performed by low energy inert (Ar+, He+) and reactive (N+2) ions. Chemical and short range structural investigations were done by XPS. Cr and Si were essentially oxidised in the as-prepared (i.e. virgin) samples. Ar+ bombardment led to a nearly complete reduction of Cr to Cr0. At the same time, about one third of the oxidised Si was converted to Si0, which was shown to form Si-Cr bonds. Also, suicide type clusters, predicted earlier by XPS, have been identified by glancing angle electron diffraction. He+ bombardment led to an increase of the surface O concentration. This was manifested also in the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment and conversion of Cr and Si predominantly to Cr3+-O, Cr6+-O and Si4+-O. With N+2 bombardment formation of Cr-N and Si-N bonds was observed. The thickness of the transformed surface layers were about 5 nm, 9 nm and 30 nm for Ar, N and He projectiles as estimated by TRIM calculations. The observed transformations were interpreted in terms of the relative importance of sputtering or ion induced mixing for Ar+ and He+, and also by the role of thermodynamic driving forces.

Original languageEnglish
Pages (from-to)510-513
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume122
Issue number3
DOIs
Publication statusPublished - Feb 1997

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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