Nanomechanical properties of silicon-, oxygen- and nitrogen-containing a-C: H films prepared by RF plasma beam CVD

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Abstract

The mechanical properties like hardness and reduced modulus of Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN), deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer by electron cyclotron wave resonance (ECWR) RF plasma beam CVD, have been determined by nanoindentation method. Relationships have been established between the nanomechanical properties and the self-bias developed during deposition, as well as the chemical structural parameters determined previously by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. In particular, an increase of the self-bias up to about 200 V during deposition led to a significant increase in the hardness of the layers. The hardness had a tendency to decrease with increasing O-content, and to increase with the increase of the modified Auger parameter for Si. The latter was attributed to the increase in the degree of crosslinking. For the first time, the hardness was found to increase with the increase of the bulk plasmon loss energy of the C 1s peak, which was interpreted in terms of the increase in the mass density.

Original languageEnglish
Pages (from-to)188-191
Number of pages4
JournalThin Solid Films
Volume482
Issue number1-2
DOIs
Publication statusPublished - Jun 22 2005

Fingerprint

Silicon
Chemical vapor deposition
Nitrogen
hardness
Hardness
vapor deposition
Oxygen
Plasmas
nitrogen
silicon
oxygen
Cyclotrons
Nanoindentation
Auger electron spectroscopy
crosslinking
nanoindentation
Silicon wafers
Crosslinking
Auger spectroscopy
cyclotrons

Keywords

  • Auger parameter
  • Diamond-like carbon
  • Nanomechanical properties
  • Plasmon loss
  • Silicon

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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title = "Nanomechanical properties of silicon-, oxygen- and nitrogen-containing a-C: H films prepared by RF plasma beam CVD",
abstract = "The mechanical properties like hardness and reduced modulus of Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN), deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer by electron cyclotron wave resonance (ECWR) RF plasma beam CVD, have been determined by nanoindentation method. Relationships have been established between the nanomechanical properties and the self-bias developed during deposition, as well as the chemical structural parameters determined previously by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. In particular, an increase of the self-bias up to about 200 V during deposition led to a significant increase in the hardness of the layers. The hardness had a tendency to decrease with increasing O-content, and to increase with the increase of the modified Auger parameter for Si. The latter was attributed to the increase in the degree of crosslinking. For the first time, the hardness was found to increase with the increase of the bulk plasmon loss energy of the C 1s peak, which was interpreted in terms of the increase in the mass density.",
keywords = "Auger parameter, Diamond-like carbon, Nanomechanical properties, Plasmon loss, Silicon",
author = "A. T{\'o}th and M. Mohai and T. Ujv{\'a}ri and I. Bert{\'o}ti",
year = "2005",
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T1 - Nanomechanical properties of silicon-, oxygen- and nitrogen-containing a-C

T2 - H films prepared by RF plasma beam CVD

AU - Tóth, A.

AU - Mohai, M.

AU - Ujvári, T.

AU - Bertóti, I.

PY - 2005/6/22

Y1 - 2005/6/22

N2 - The mechanical properties like hardness and reduced modulus of Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN), deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer by electron cyclotron wave resonance (ECWR) RF plasma beam CVD, have been determined by nanoindentation method. Relationships have been established between the nanomechanical properties and the self-bias developed during deposition, as well as the chemical structural parameters determined previously by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. In particular, an increase of the self-bias up to about 200 V during deposition led to a significant increase in the hardness of the layers. The hardness had a tendency to decrease with increasing O-content, and to increase with the increase of the modified Auger parameter for Si. The latter was attributed to the increase in the degree of crosslinking. For the first time, the hardness was found to increase with the increase of the bulk plasmon loss energy of the C 1s peak, which was interpreted in terms of the increase in the mass density.

AB - The mechanical properties like hardness and reduced modulus of Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN), deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer by electron cyclotron wave resonance (ECWR) RF plasma beam CVD, have been determined by nanoindentation method. Relationships have been established between the nanomechanical properties and the self-bias developed during deposition, as well as the chemical structural parameters determined previously by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. In particular, an increase of the self-bias up to about 200 V during deposition led to a significant increase in the hardness of the layers. The hardness had a tendency to decrease with increasing O-content, and to increase with the increase of the modified Auger parameter for Si. The latter was attributed to the increase in the degree of crosslinking. For the first time, the hardness was found to increase with the increase of the bulk plasmon loss energy of the C 1s peak, which was interpreted in terms of the increase in the mass density.

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KW - Plasmon loss

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