Nanomechanical properties of ion-implanted Si

P. M. Nagy, D. Aranyi, P. Horváth, G. Peto, E. Kálmán

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The nanomechanical properties of single crystalline silicon samples has gained wide attention in recent years, because of the abnormal loading effects, caused by the pressure-induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystal Si samples have been studied by nanoindentation experiments, and by atomic force microscopy (AFM). The implantation of Si wafers was carried out by P ions at 40 KeV energy, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide consistent evaluation of Young's modulus and hardness of the samples (measured with Berkovich-, spherical- and cube corner indenters), statistics of the pop-in and pop-out effects during the indentation, and interesting results about the piling-up behavior of the Si material. The plastic work on the sample was also evaluated in cyclic indentation experiments by calculating the area of the hysteresis loops in the load curve.

Original languageEnglish
Pages (from-to)875-880
Number of pages6
JournalSurface and Interface Analysis
Volume40
Issue number3-4
DOIs
Publication statusPublished - Mar 1 2008

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Keywords

  • AFM
  • Ion-implantation
  • Mechanical properties
  • Nanoindentation

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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