Nanoindentation of silicon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young's modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

Original languageEnglish
Pages (from-to)29-36
Number of pages8
JournalMaterials Science Forum
Volume604-605
DOIs
Publication statusPublished - 2009

Fingerprint

Silicon
Nanoindentation
nanoindentation
Ions
silicon
Crystalline materials
ions
Defect structures
Defect density
unloading
Unloading
Piles
phase transformations
Atomic force microscopy
implantation
modulus of elasticity
hardness
Elastic moduli
Phase transitions
Hardness

Keywords

  • AFM
  • Ion-implantation
  • Nanoindentation
  • Phase transformation of Si
  • Pile-up
  • Pop-in
  • Surface modification

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Nanoindentation of silicon. / Nagy, P.; Horváth, P.; Pető, G.; Kálmán, E.

In: Materials Science Forum, Vol. 604-605, 2009, p. 29-36.

Research output: Contribution to journalArticle

Nagy, P. ; Horváth, P. ; Pető, G. ; Kálmán, E. / Nanoindentation of silicon. In: Materials Science Forum. 2009 ; Vol. 604-605. pp. 29-36.
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