N doping in the liquid phase epitaxial growth of GaP:N light emitting diodes

J. Pfeifer, L. Csontos, M. Gál

Research output: Contribution to journalArticle

Abstract

GaP:N green light emitting p-n junction diodes with quantum efficiencies at 20 mA d.c. of 0.1% have been reproducible grown in a modified LPE slider system. A correlation between growth defects caused by solid GaN traces present in the melt and lg I-V and ηq-I characteristics of the diodes has been found.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalActa Physica Academiae Scientiarum Hungaricae
Volume47
Issue number1-3
DOIs
Publication statusPublished - Oct 1 1979

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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