N doping in the liquid phase epitaxial growth of GaP: N light emitting diodes

J. Pfeifer, L. Csontos, M. Gál

Research output: Contribution to journalArticle

Abstract

GaP:N green light emitting p-n junction diodes with quantum efficiencies at 20 mA d.c. of 0.1% have been reproducible grown in a modified LPE slider system. A correlation between growth defects caused by solid GaN traces present in the melt and lg I-V and ηq-I characteristics of the diodes has been found.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalActa Physica Academiae Scientiarum Hungaricae
Volume47
Issue number1-3
DOIs
Publication statusPublished - Oct 1979

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junction diodes
p-n junctions
chutes
quantum efficiency
liquid phases
light emitting diodes
diodes
defects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

N doping in the liquid phase epitaxial growth of GaP : N light emitting diodes. / Pfeifer, J.; Csontos, L.; Gál, M.

In: Acta Physica Academiae Scientiarum Hungaricae, Vol. 47, No. 1-3, 10.1979, p. 45-50.

Research output: Contribution to journalArticle

@article{9ed157204a63441eaeae5b4e9911752b,
title = "N doping in the liquid phase epitaxial growth of GaP: N light emitting diodes",
abstract = "GaP:N green light emitting p-n junction diodes with quantum efficiencies at 20 mA d.c. of 0.1{\%} have been reproducible grown in a modified LPE slider system. A correlation between growth defects caused by solid GaN traces present in the melt and lg I-V and ηq-I characteristics of the diodes has been found.",
author = "J. Pfeifer and L. Csontos and M. G{\'a}l",
year = "1979",
month = "10",
doi = "10.1007/BF03156509",
language = "English",
volume = "47",
pages = "45--50",
journal = "Acta Physica Academiae Scientiarum Hungaricae",
issn = "0001-6705",
publisher = "Akademiai Kiado",
number = "1-3",

}

TY - JOUR

T1 - N doping in the liquid phase epitaxial growth of GaP

T2 - N light emitting diodes

AU - Pfeifer, J.

AU - Csontos, L.

AU - Gál, M.

PY - 1979/10

Y1 - 1979/10

N2 - GaP:N green light emitting p-n junction diodes with quantum efficiencies at 20 mA d.c. of 0.1% have been reproducible grown in a modified LPE slider system. A correlation between growth defects caused by solid GaN traces present in the melt and lg I-V and ηq-I characteristics of the diodes has been found.

AB - GaP:N green light emitting p-n junction diodes with quantum efficiencies at 20 mA d.c. of 0.1% have been reproducible grown in a modified LPE slider system. A correlation between growth defects caused by solid GaN traces present in the melt and lg I-V and ηq-I characteristics of the diodes has been found.

UR - http://www.scopus.com/inward/record.url?scp=77951508905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951508905&partnerID=8YFLogxK

U2 - 10.1007/BF03156509

DO - 10.1007/BF03156509

M3 - Article

AN - SCOPUS:77951508905

VL - 47

SP - 45

EP - 50

JO - Acta Physica Academiae Scientiarum Hungaricae

JF - Acta Physica Academiae Scientiarum Hungaricae

SN - 0001-6705

IS - 1-3

ER -