Multilayer strained Si/SiGe structures: Fabrication problems, interface characteristics, and physical properties

L. K. Orlov, Z. J. Horvath, N. L. Ivina, V. I. Vdovin, E. A. Steinman, M. L. Orlov, Yu A. Romanov

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The crystal structure, optical and electrical properties of the Si 1-xGex/Si heterojunctions were investigated. In this regard, the efficiency of the electron hole recombination through the dislocation states in the heterojunction was also studied. The transmission electron microscopy (TEM) and photoluminescence (PL) spectra methods were used to study the phenomena connected with misfit dislocation in the epitaxial structure. The estimation of the energy of the potential barrier in the conductivity band nearest to the heteroboundary was done on the basis of electrical measurements and Schottky model.

Original languageEnglish
Pages (from-to)169-174
Number of pages6
JournalOpto-electronics Review
Volume11
Issue number2
Publication statusPublished - Jan 1 2003

Keywords

  • Electrical properties
  • Heterojunction
  • Misfit dislocation
  • Photoluminescence
  • Silicon
  • Solid solution

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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    Orlov, L. K., Horvath, Z. J., Ivina, N. L., Vdovin, V. I., Steinman, E. A., Orlov, M. L., & Romanov, Y. A. (2003). Multilayer strained Si/SiGe structures: Fabrication problems, interface characteristics, and physical properties. Opto-electronics Review, 11(2), 169-174.