Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties

L. K. Orlov, Z. Horváth, N. L. Ivina, V. I. Vdovin, E. A. Steinman, M. L. Orlov, Y. A. Romanov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objectives of this investigation are structural and physical characteristics of the n-Si1-xGex/n(p)-Si heterojunction under strong elastic deformation of Si1-xGex layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJ. Rutkowski, A. Rogalski
Pages211-216
Number of pages6
Volume5136
Publication statusPublished - 2002
EventSolid State Crytals 2002 Crystalline Materials for Optoelectronics - Zakopane, Poland
Duration: Oct 14 2002Oct 18 2002

Other

OtherSolid State Crytals 2002 Crystalline Materials for Optoelectronics
CountryPoland
CityZakopane
Period10/14/0210/18/02

Fingerprint

Dislocations (crystals)
Heterojunctions
Multilayers
Physical properties
physical properties
Fabrication
fabrication
heterojunctions
Elastic deformation
Band structure
Diodes
elastic deformation
Transmission electron microscopy
Electrons
diodes
optics
transmission electron microscopy

Keywords

  • Electrical properties
  • Heterojunction
  • Misfit dislocation
  • Photoluminescence
  • Silicon
  • Solid solution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Orlov, L. K., Horváth, Z., Ivina, N. L., Vdovin, V. I., Steinman, E. A., Orlov, M. L., & Romanov, Y. A. (2002). Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. In J. Rutkowski, & A. Rogalski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5136, pp. 211-216)

Multilayer strained Si-SiGe structures : Fabrication problems, interface characteristics and physical properties. / Orlov, L. K.; Horváth, Z.; Ivina, N. L.; Vdovin, V. I.; Steinman, E. A.; Orlov, M. L.; Romanov, Y. A.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / J. Rutkowski; A. Rogalski. Vol. 5136 2002. p. 211-216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Orlov, LK, Horváth, Z, Ivina, NL, Vdovin, VI, Steinman, EA, Orlov, ML & Romanov, YA 2002, Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. in J Rutkowski & A Rogalski (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5136, pp. 211-216, Solid State Crytals 2002 Crystalline Materials for Optoelectronics, Zakopane, Poland, 10/14/02.
Orlov LK, Horváth Z, Ivina NL, Vdovin VI, Steinman EA, Orlov ML et al. Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. In Rutkowski J, Rogalski A, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5136. 2002. p. 211-216
Orlov, L. K. ; Horváth, Z. ; Ivina, N. L. ; Vdovin, V. I. ; Steinman, E. A. ; Orlov, M. L. ; Romanov, Y. A. / Multilayer strained Si-SiGe structures : Fabrication problems, interface characteristics and physical properties. Proceedings of SPIE - The International Society for Optical Engineering. editor / J. Rutkowski ; A. Rogalski. Vol. 5136 2002. pp. 211-216
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