Multilayer strained Si-SiGe structures

Fabrication problems, interface characteristics and physical properties

L. K. Orlov, Z. Horváth, N. L. Ivina, V. I. Vdovin, E. A. Steinman, M. L. Orlov, Y. A. Romanov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objectives of this investigation are structural and physical characteristics of the n-Si1-xGex/n(p)-Si heterojunction under strong elastic deformation of Si1-xGex layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJ. Rutkowski, A. Rogalski
Pages211-216
Number of pages6
Volume5136
Publication statusPublished - 2002
EventSolid State Crytals 2002 Crystalline Materials for Optoelectronics - Zakopane, Poland
Duration: Oct 14 2002Oct 18 2002

Other

OtherSolid State Crytals 2002 Crystalline Materials for Optoelectronics
CountryPoland
CityZakopane
Period10/14/0210/18/02

Fingerprint

Dislocations (crystals)
Heterojunctions
Multilayers
Physical properties
physical properties
Fabrication
fabrication
heterojunctions
Elastic deformation
Band structure
Diodes
elastic deformation
Transmission electron microscopy
Electrons
diodes
optics
transmission electron microscopy

Keywords

  • Electrical properties
  • Heterojunction
  • Misfit dislocation
  • Photoluminescence
  • Silicon
  • Solid solution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Orlov, L. K., Horváth, Z., Ivina, N. L., Vdovin, V. I., Steinman, E. A., Orlov, M. L., & Romanov, Y. A. (2002). Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. In J. Rutkowski, & A. Rogalski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5136, pp. 211-216)

Multilayer strained Si-SiGe structures : Fabrication problems, interface characteristics and physical properties. / Orlov, L. K.; Horváth, Z.; Ivina, N. L.; Vdovin, V. I.; Steinman, E. A.; Orlov, M. L.; Romanov, Y. A.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / J. Rutkowski; A. Rogalski. Vol. 5136 2002. p. 211-216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Orlov, LK, Horváth, Z, Ivina, NL, Vdovin, VI, Steinman, EA, Orlov, ML & Romanov, YA 2002, Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. in J Rutkowski & A Rogalski (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5136, pp. 211-216, Solid State Crytals 2002 Crystalline Materials for Optoelectronics, Zakopane, Poland, 10/14/02.
Orlov LK, Horváth Z, Ivina NL, Vdovin VI, Steinman EA, Orlov ML et al. Multilayer strained Si-SiGe structures: Fabrication problems, interface characteristics and physical properties. In Rutkowski J, Rogalski A, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5136. 2002. p. 211-216
Orlov, L. K. ; Horváth, Z. ; Ivina, N. L. ; Vdovin, V. I. ; Steinman, E. A. ; Orlov, M. L. ; Romanov, Y. A. / Multilayer strained Si-SiGe structures : Fabrication problems, interface characteristics and physical properties. Proceedings of SPIE - The International Society for Optical Engineering. editor / J. Rutkowski ; A. Rogalski. Vol. 5136 2002. pp. 211-216
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