Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

D. Giubertoni, G. Pepponi, B. Beckhoff, P. Hoenicke, S. Gennaro, F. Meirer, D. Ingerle, G. Steinhauser, M. Fried, P. Petrik, A. Parisini, M. A. Reading, C. Streli, J. A. Van Den Berg, M. Bersani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multi-laboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages45-49
Number of pages5
Volume1173
DOIs
Publication statusPublished - 2009
Event2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics - Albany, NY, United States
Duration: May 11 2009May 15 2009

Other

Other2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics
CountryUnited States
CityAlbany, NY
Period5/11/095/15/09

Fingerprint

arsenic
silicon
damage
x ray fluorescence
neutron activation analysis
ion scattering
p-n junctions
grazing incidence
secondary ion mass spectrometry
ellipsometry
CMOS
synchrotron radiation
fluence
dosage
transmission electron microscopy
scanning electron microscopy
energy
radiation
excitation

Keywords

  • Arsenic
  • Ellipsometry
  • GIXRF
  • MEIS
  • Silicon
  • SIMS
  • Ultra shallow junctions
  • Z-contrast ADF-STEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Giubertoni, D., Pepponi, G., Beckhoff, B., Hoenicke, P., Gennaro, S., Meirer, F., ... Bersani, M. (2009). Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. In AIP Conference Proceedings (Vol. 1173, pp. 45-49) https://doi.org/10.1063/1.3251258

Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. / Giubertoni, D.; Pepponi, G.; Beckhoff, B.; Hoenicke, P.; Gennaro, S.; Meirer, F.; Ingerle, D.; Steinhauser, G.; Fried, M.; Petrik, P.; Parisini, A.; Reading, M. A.; Streli, C.; Van Den Berg, J. A.; Bersani, M.

AIP Conference Proceedings. Vol. 1173 2009. p. 45-49.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Giubertoni, D, Pepponi, G, Beckhoff, B, Hoenicke, P, Gennaro, S, Meirer, F, Ingerle, D, Steinhauser, G, Fried, M, Petrik, P, Parisini, A, Reading, MA, Streli, C, Van Den Berg, JA & Bersani, M 2009, Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. in AIP Conference Proceedings. vol. 1173, pp. 45-49, 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Albany, NY, United States, 5/11/09. https://doi.org/10.1063/1.3251258
Giubertoni D, Pepponi G, Beckhoff B, Hoenicke P, Gennaro S, Meirer F et al. Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. In AIP Conference Proceedings. Vol. 1173. 2009. p. 45-49 https://doi.org/10.1063/1.3251258
Giubertoni, D. ; Pepponi, G. ; Beckhoff, B. ; Hoenicke, P. ; Gennaro, S. ; Meirer, F. ; Ingerle, D. ; Steinhauser, G. ; Fried, M. ; Petrik, P. ; Parisini, A. ; Reading, M. A. ; Streli, C. ; Van Den Berg, J. A. ; Bersani, M. / Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium. AIP Conference Proceedings. Vol. 1173 2009. pp. 45-49
@inproceedings{116e25b01f974dafa0533c35b8f55898,
title = "Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium",
abstract = "The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multi-laboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.",
keywords = "Arsenic, Ellipsometry, GIXRF, MEIS, Silicon, SIMS, Ultra shallow junctions, Z-contrast ADF-STEM",
author = "D. Giubertoni and G. Pepponi and B. Beckhoff and P. Hoenicke and S. Gennaro and F. Meirer and D. Ingerle and G. Steinhauser and M. Fried and P. Petrik and A. Parisini and Reading, {M. A.} and C. Streli and {Van Den Berg}, {J. A.} and M. Bersani",
year = "2009",
doi = "10.1063/1.3251258",
language = "English",
isbn = "9780735407121",
volume = "1173",
pages = "45--49",
booktitle = "AIP Conference Proceedings",

}

TY - GEN

T1 - Multi-technique characterization of arsenic ultra shallow junctions in silicon within the ANNA consortium

AU - Giubertoni, D.

AU - Pepponi, G.

AU - Beckhoff, B.

AU - Hoenicke, P.

AU - Gennaro, S.

AU - Meirer, F.

AU - Ingerle, D.

AU - Steinhauser, G.

AU - Fried, M.

AU - Petrik, P.

AU - Parisini, A.

AU - Reading, M. A.

AU - Streli, C.

AU - Van Den Berg, J. A.

AU - Bersani, M.

PY - 2009

Y1 - 2009

N2 - The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multi-laboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.

AB - The use of ultra shallow distributions of dopant in silicon to realize source and drain extensions in CMOS devices requires the development of analytical techniques able to provide their quantitative characterization. Information like retained dopant fluence, depth distribution and damage evolution are of fundamental importance to tailor the ultra shallow p/n junctions. In this work a summary of a complementary approach developed within an European multi-laboratories consortium (ANNA) is reported. Results obtained with several techniques on arsenic ultra low energy (0.5-5 keV) implants in Si are described. The employed techniques were secondary ion mass spectrometry, grazing incidence x-ray fluorescence (with either conventional or synchrotron radiation excitation), neutron activation analysis, medium energy ion scattering, Z-contrast annular dark field scanning transmission electron microscopy and spectroscopic ellipsometry. The cross comparisons of dose measurements, dopant distribution and damage build-up behavior enabled a detailed characterization of the implanted samples and identified the overlap of information from each analytical techniques.

KW - Arsenic

KW - Ellipsometry

KW - GIXRF

KW - MEIS

KW - Silicon

KW - SIMS

KW - Ultra shallow junctions

KW - Z-contrast ADF-STEM

UR - http://www.scopus.com/inward/record.url?scp=70450228734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450228734&partnerID=8YFLogxK

U2 - 10.1063/1.3251258

DO - 10.1063/1.3251258

M3 - Conference contribution

AN - SCOPUS:70450228734

SN - 9780735407121

VL - 1173

SP - 45

EP - 49

BT - AIP Conference Proceedings

ER -