Morphology and interfacial properties of microrelief metal-semiconductor interface

N. L. Dmitruk, O. Yu Borkovskaya, I. N. Dmitruk, S. V. Mamykin, Zs J. Horvath, I. B. Mamontova

Research output: Contribution to journalArticle

39 Citations (Scopus)


The electronic properties of metal/semiconductor Au/GaAs heterojunctions were investigated to determine the mechanisms of the current flow through the textured Au/GaAs junctions. The current-voltage characteristics, capacitance-voltage characteristics and photoelectric characteristics of the diode structures were analyzed for this purpose. The effect of the morphology of Au/GaAs interface microrelief on current flow mechanisms and recombination properties of the interfaces were examined. Atomic force microscopy was used to investigate the geometrical and statistical parameters of microrelief.

Original languageEnglish
Pages (from-to)455-460
Number of pages6
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - May 8 2002



  • Electronic properties
  • Metal/semiconductor interface
  • Microrelief

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Dmitruk, N. L., Borkovskaya, O. Y., Dmitruk, I. N., Mamykin, S. V., Horvath, Z. J., & Mamontova, I. B. (2002). Morphology and interfacial properties of microrelief metal-semiconductor interface. Applied Surface Science, 190(1-4), 455-460.