Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver

Pallab Bhattacharya, Jian Xu, Gyorgy Váró, Duane L. Marcy, Robert R. Birge

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.

Original languageEnglish
Pages (from-to)839-841
Number of pages3
JournalOptics Letters
Volume27
Issue number10
Publication statusPublished - May 15 2002

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field effect transistors
photovoltages
photolithography
electrodeposition
integrated circuits
molecular beam epitaxy
modulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Bhattacharya, P., Xu, J., Váró, G., Marcy, D. L., & Birge, R. R. (2002). Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver. Optics Letters, 27(10), 839-841.

Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver. / Bhattacharya, Pallab; Xu, Jian; Váró, Gyorgy; Marcy, Duane L.; Birge, Robert R.

In: Optics Letters, Vol. 27, No. 10, 15.05.2002, p. 839-841.

Research output: Contribution to journalArticle

Bhattacharya, P, Xu, J, Váró, G, Marcy, DL & Birge, RR 2002, 'Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver', Optics Letters, vol. 27, no. 10, pp. 839-841.
Bhattacharya, Pallab ; Xu, Jian ; Váró, Gyorgy ; Marcy, Duane L. ; Birge, Robert R. / Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver. In: Optics Letters. 2002 ; Vol. 27, No. 10. pp. 839-841.
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