The surface stress distribution in an ordered quantum dot superlattice is investigated using classical molecular dynamics simulations. We find that the surface stress field induced by various numbers (from 1 to 9) of Ge islands embedded in a Si(001) substrate is in good agreement with analytical expressions based on pointlike embedded force dipoles, explaining the tendency of layered arrays to form vertically aligned columns. The short-ranged nature of this stress field implies that only the uppermost layers affect the surface growth and that their influence decreases rapidly with layer depth.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - Jan 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics