Molecular-dynamics investigation of the surface stress distribution in a Ge/Si quantum dot superlattice

I. Daruka, A. L. Barabási, S. J. Zhou, T. C. Germann, P. S. Lomdahl, A. R. Bishop

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

The surface stress distribution in an ordered quantum dot superlattice is investigated using classical molecular dynamics simulations. We find that the surface stress field induced by various numbers (from 1 to 9) of Ge islands embedded in a Si(001) substrate is in good agreement with analytical expressions based on pointlike embedded force dipoles, explaining the tendency of layered arrays to form vertically aligned columns. The short-ranged nature of this stress field implies that only the uppermost layers affect the surface growth and that their influence decreases rapidly with layer depth.

Original languageEnglish
Pages (from-to)R2150-R2153
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number4
DOIs
Publication statusPublished - Jan 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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