Molecular beam epitaxy of ZnCdSe/ZnSe wires on patterned GaAs substrates

D. Stifter, W. Heiß, A. Bonanni, G. Prechtl, M. Schmid, K. Hingerl, H. Seyringer, H. Sitter, J. Liu, E. Gornik, L. Tóth, Á Barna

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Abstract

Zn1 - xCdxSe/ZnSe quantum wells were grown by molecular beam epitaxy on GaAs substrates with a sub-micron grating along the [1 1 0]-direction. The synthesized structures were examined by means of transmission electron and scanning electron microscopy, proving that selective growth takes place. The reduced growth rate on the sidewalls of the grooves leads to a narrowing of the upper plateaux of the top ridges confining the two-dimensional layers laterally. From photoluminescence measurements of coherently grown samples, we can determine a blue shift with respect to the unpatterned reference samples. The blue shift of the grooves depends strongly on the total thickness of the ZnSe films, indicating complex strain effects in the layers.

Original languageEnglish
Pages (from-to)347-351
Number of pages5
JournalJournal of Crystal Growth
Volume184-185
Publication statusPublished - Jan 1 1998

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Stifter, D., Heiß, W., Bonanni, A., Prechtl, G., Schmid, M., Hingerl, K., Seyringer, H., Sitter, H., Liu, J., Gornik, E., Tóth, L., & Barna, Á. (1998). Molecular beam epitaxy of ZnCdSe/ZnSe wires on patterned GaAs substrates. Journal of Crystal Growth, 184-185, 347-351.