Modulated CNx films prepared by IBAD

G. Sáfrán, A. Kolitsch, S. Malhuitre, S. Trasobares, I. Kovács, O. Geszti, M. Menyhárd, C. Colliex, G. Radnóczi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

CNx thin films have been prepared by ion beam assisted deposition (IBAD) varying the C-atom to N-ion ratio during deposition. The layers were studied by means of TEM and EELS investigation, ERDA and AES depth profiling. The obtained films were amorphous. The incorporation probability of N into the films was found to depend on the N/C arrival ratio. Large amount of N incorporation was found above and small amount below a N/C arrival rate of 0.3. Due to intentional change in the N/C arrival rate, modulated structures have been produced. The N concentration in the individual layers of modulated samples was found to exhibit distinct values of approximately 5 and 20 at.%. The erosion rate of the various CNx layers upon Ar+ -ion bombardment depends on their N content. The relative erosion rate of the samples containing nitrogen of 20 and 5 at.% was found to be rrel = r20%/r5% = 1.6 (1.2 keV, 83°angle of incidence. It was determined by XTEM and EELS that the origin of the TEM image contrast marking out the individual sublayers is mainly due to density variations in the modulated structure and partly due to thickness differences of the cross sectional TEM samples as a result of Ar+ ion milling of layers of various compositions.

Original languageEnglish
Pages (from-to)1552-1559
Number of pages8
JournalDiamond and Related Materials
Volume11
Issue number8
DOIs
Publication statusPublished - Jul 2002

Fingerprint

Ion beam assisted deposition
Electron energy loss spectroscopy
ion beams
Transmission electron microscopy
arrivals
Erosion
Ions
transmission electron microscopy
erosion
Depth profiling
Amorphous films
Ion bombardment
ions
image contrast
Nitrogen
marking
bombardment
Thin films
Atoms
incidence

Keywords

  • Carbon-nitride
  • Ion assisted deposition
  • Modulated structure
  • Sputter erosion rate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Modulated CNx films prepared by IBAD. / Sáfrán, G.; Kolitsch, A.; Malhuitre, S.; Trasobares, S.; Kovács, I.; Geszti, O.; Menyhárd, M.; Colliex, C.; Radnóczi, G.

In: Diamond and Related Materials, Vol. 11, No. 8, 07.2002, p. 1552-1559.

Research output: Contribution to journalArticle

Sáfrán, G, Kolitsch, A, Malhuitre, S, Trasobares, S, Kovács, I, Geszti, O, Menyhárd, M, Colliex, C & Radnóczi, G 2002, 'Modulated CNx films prepared by IBAD', Diamond and Related Materials, vol. 11, no. 8, pp. 1552-1559. https://doi.org/10.1016/S0925-9635(02)00099-7
Sáfrán G, Kolitsch A, Malhuitre S, Trasobares S, Kovács I, Geszti O et al. Modulated CNx films prepared by IBAD. Diamond and Related Materials. 2002 Jul;11(8):1552-1559. https://doi.org/10.1016/S0925-9635(02)00099-7
Sáfrán, G. ; Kolitsch, A. ; Malhuitre, S. ; Trasobares, S. ; Kovács, I. ; Geszti, O. ; Menyhárd, M. ; Colliex, C. ; Radnóczi, G. / Modulated CNx films prepared by IBAD. In: Diamond and Related Materials. 2002 ; Vol. 11, No. 8. pp. 1552-1559.
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