Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon

T. Mohácsy, N. Q. Khánh, M. Ádám, J. Gyulai

Research output: Contribution to journalArticle

Abstract

Depth profiling of carrier lifetime can be a very useful method for investigation of minority charge carrier lifetime modification by ion implantation. A modified pulse C-t method has been developed for this purpose using the MOS structure fabricated on bulk Si prior to ion implantation. This technique enables the determination of lifetime distribution in the near surface region. Verification of the method was done on the devices implanted with MeV He+ ions for different doses. The extracted lifetime profiles as well as the advantages and limitations of the method are also discussed.

Original languageEnglish
Pages (from-to)399-401
Number of pages3
JournalVacuum
Volume50
Issue number3-4
DOIs
Publication statusPublished - Jul 1 1998

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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