Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon

T. Mohácsy, N. Q. Khánh, M. Ádám, J. Gyulai

Research output: Contribution to journalArticle

Abstract

Depth profiling of carrier lifetime can be a very useful method for investigation of minority charge carrier lifetime modification by ion implantation. A modified pulse C-t method has been developed for this purpose using the MOS structure fabricated on bulk Si prior to ion implantation. This technique enables the determination of lifetime distribution in the near surface region. Verification of the method was done on the devices implanted with MeV He+ ions for different doses. The extracted lifetime profiles as well as the advantages and limitations of the method are also discussed.

Original languageEnglish
Pages (from-to)399-401
Number of pages3
JournalVacuum
Volume50
Issue number3-4
Publication statusPublished - Jul 1 1998

Fingerprint

Carrier lifetime
Silicon
carrier lifetime
Ion implantation
ion implantation
life (durability)
Depth profiling
silicon
minorities
profiles
Charge carriers
charge carriers
Ions
dosage
pulses
ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon. / Mohácsy, T.; Khánh, N. Q.; Ádám, M.; Gyulai, J.

In: Vacuum, Vol. 50, No. 3-4, 01.07.1998, p. 399-401.

Research output: Contribution to journalArticle

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