Model for the non-linear intensity dependence of photostructural changes in amorphous semiconductors

J. Hajto, I. Jánossy

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this paper a model of the photostructural changes is presented, with emphasis on the non-linear intensity dependence. The quantitative analysis of the model predicts non-linear intensity dependence for the kinetics of the photostructural changes as well as for the light induced optical anisotropy in accordance with experiments.

Original languageEnglish
Pages (from-to)1207-1210
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume97-98
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1987

Fingerprint

Amorphous semiconductors
amorphous semiconductors
Optical anisotropy
quantitative analysis
anisotropy
Kinetics
kinetics
Chemical analysis
Experiments

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Model for the non-linear intensity dependence of photostructural changes in amorphous semiconductors. / Hajto, J.; Jánossy, I.

In: Journal of Non-Crystalline Solids, Vol. 97-98, No. PART 2, 02.12.1987, p. 1207-1210.

Research output: Contribution to journalArticle

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