MNOS and MNS memory structures with embedded Si nanocrystals

Z. Horváth, P. Basa, T. Jászi, K. Nagy, A. Pap, T. Szabó, P. Szöllosi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of ±9 V and ±10 V, 100 ms, respectively.

Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007
PublisherWorld Scientific Publishing Co.
Pages566-569
Number of pages4
ISBN (Print)9789812770950, 9812705996, 9789812705990
DOIs
Publication statusPublished - Jan 1 2007

Fingerprint

metal-nitride-oxide-silicon
Nanoparticles
Nanocrystals
pulse charging
nanocrystals
Vapor Pressure
Data storage equipment
Low pressure chemical vapor deposition
charging
tunnels
Tunnels
low pressure
vapor deposition
silicon nitride

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Horváth, Z., Basa, P., Jászi, T., Nagy, K., Pap, A., Szabó, T., & Szöllosi, P. (2007). MNOS and MNS memory structures with embedded Si nanocrystals. In Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007 (pp. 566-569). World Scientific Publishing Co.. https://doi.org/10.1142/9789812770950_0128

MNOS and MNS memory structures with embedded Si nanocrystals. / Horváth, Z.; Basa, P.; Jászi, T.; Nagy, K.; Pap, A.; Szabó, T.; Szöllosi, P.

Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., 2007. p. 566-569.

Research output: Chapter in Book/Report/Conference proceedingChapter

Horváth, Z, Basa, P, Jászi, T, Nagy, K, Pap, A, Szabó, T & Szöllosi, P 2007, MNOS and MNS memory structures with embedded Si nanocrystals. in Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., pp. 566-569. https://doi.org/10.1142/9789812770950_0128
Horváth Z, Basa P, Jászi T, Nagy K, Pap A, Szabó T et al. MNOS and MNS memory structures with embedded Si nanocrystals. In Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co. 2007. p. 566-569 https://doi.org/10.1142/9789812770950_0128
Horváth, Z. ; Basa, P. ; Jászi, T. ; Nagy, K. ; Pap, A. ; Szabó, T. ; Szöllosi, P. / MNOS and MNS memory structures with embedded Si nanocrystals. Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007. World Scientific Publishing Co., 2007. pp. 566-569
@inbook{541adf6a7f43415e85a998e39b8b55b8,
title = "MNOS and MNS memory structures with embedded Si nanocrystals",
abstract = "Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of ±9 V and ±10 V, 100 ms, respectively.",
author = "Z. Horv{\'a}th and P. Basa and T. J{\'a}szi and K. Nagy and A. Pap and T. Szab{\'o} and P. Sz{\"o}llosi",
year = "2007",
month = "1",
day = "1",
doi = "10.1142/9789812770950_0128",
language = "English",
isbn = "9789812770950",
pages = "566--569",
booktitle = "Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007",
publisher = "World Scientific Publishing Co.",

}

TY - CHAP

T1 - MNOS and MNS memory structures with embedded Si nanocrystals

AU - Horváth, Z.

AU - Basa, P.

AU - Jászi, T.

AU - Nagy, K.

AU - Pap, A.

AU - Szabó, T.

AU - Szöllosi, P.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of ±9 V and ±10 V, 100 ms, respectively.

AB - Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of ±9 V and ±10 V, 100 ms, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84968919015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84968919015&partnerID=8YFLogxK

U2 - 10.1142/9789812770950_0128

DO - 10.1142/9789812770950_0128

M3 - Chapter

SN - 9789812770950

SN - 9812705996

SN - 9789812705990

SP - 566

EP - 569

BT - Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007

PB - World Scientific Publishing Co.

ER -