MNOS and MNS memory structures with embedded Si nanocrystals

Z. Horváth, P. Basa, T. Jászi, K. Nagy, A. Pap, T. Szabó, P. Szöllosi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Non-volatile MNOS and MNS memory structures with an embedded sheet of Si nanocrystals have been prepared by low pressure chemical vapour deposition using a Si3N4 control layer and SiO2 or Si3N4 tunnel layers. Si nanocrystals improved the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V was achieved for charging pulses of ±9 V and ±10 V, 100 ms, respectively.

Original languageEnglish
Title of host publicationPhysics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007
PublisherWorld Scientific Publishing Co.
Pages566-569
Number of pages4
ISBN (Print)9789812770950, 9812705996, 9789812705990
DOIs
Publication statusPublished - Jan 1 2007

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Horváth, Z., Basa, P., Jászi, T., Nagy, K., Pap, A., Szabó, T., & Szöllosi, P. (2007). MNOS and MNS memory structures with embedded Si nanocrystals. In Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes: Proceedings of the International Conference on Nanomeeting 2007 Minsk, Belarus, 22 - 25 May 2007 (pp. 566-569). World Scientific Publishing Co.. https://doi.org/10.1142/9789812770950_0128