Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

O. Yastrubchak, T. Wosinski, T. Figielski, E. Lusakowska, B. Pecz, A. L. Toth

Research output: Contribution to journalConference article

27 Citations (Scopus)


A regular network of 60° misfit dislocations aligned along two orthogonal 〈110〉 directions at the (001) interface of GaAs/InGaAs heterostructures with a small lattice-mismatch has been revealed by means of transmission electron microscopy and electron-beam induced current mode in a scanning electron microscope. The network of misfit dislocations has been also reproduced, in a form of a well-defined cross-hatch pattern on the surface of the structures, with atomic force microscopy. Almost one-to-one correspondence between the structure of misfit dislocations at the interface and the surface morphology clearly demonstrate that the cross-hatch development results primarily from misfit-dislocation generation.

Original languageEnglish
Pages (from-to)561-563
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
Publication statusPublished - Apr 1 2003
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: Jul 22 2002Jul 26 2002


  • Misfit dislocations
  • Semiconductor heterostructures
  • Surface morphology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures'. Together they form a unique fingerprint.

  • Cite this