Misfit-dislocation induced surface morphology of InGaAs/GaAs heterostructures

Oksana Yastrubchak, Tadeusz Wosiński, Elzbieta Łusakowska, Tadeusz Figielski, Attila L. Tóth

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8 Citations (Scopus)


The correlation between the surface cross-hatched morphology and the interfacial misfit dislocations in partially relaxed InGaAs/GaAs heterostructures was studied by means of atomic force microscopy and electron-beam induced current mode in a scanning electron microscope. A close correspondence between the misfit-dislocation network at the interface and the surface morphology shows that the cross-hatch development results primarily from the misfit-dislocation generation. Statistical analysis of the surface roughness reveals an anisotropy in strain relaxation of the epitaxial layers, which results from an asymmetry in the misfit-dislocation formation.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalMicrochimica Acta
Issue number1-4
Publication statusPublished - Jun 24 2004



  • AFM
  • InGaAs layers
  • Misfit dislocations
  • Strain relaxation

ASJC Scopus subject areas

  • Analytical Chemistry

Cite this

Yastrubchak, O., Wosiński, T., Łusakowska, E., Figielski, T., & Tóth, A. L. (2004). Misfit-dislocation induced surface morphology of InGaAs/GaAs heterostructures. Microchimica Acta, 145(1-4), 267-270.