Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling

E. Belas, J. Franc, R. Grill, A. Tóth, P. Höschl, H. Sitter, P. Moravec, K. Lischka

Research output: Contribution to journalArticle

Abstract

The parameters of p-n junctions produced by ion-beam milling of the p-Cd0.8Hg0.2Te surface were assessed by means of electron-beam-induced-current imaging. The mechanism responsible for formation of the n-type layer is discussed in terms of the diffusion of mercury interstitials produced at the ion-milled surface. The proposed technique is shown to yield high-quality materials suitable for fabrication of photoresistors and SPRITE detectors.

Original languageEnglish
Pages (from-to)836-839
Number of pages4
JournalInorganic Materials
Volume32
Issue number8
Publication statusPublished - Aug 1996

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Ion beams
Photoresistors
Induced currents
Mercury
Electron beams
Ions
Detectors
Imaging techniques
Fabrication

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Belas, E., Franc, J., Grill, R., Tóth, A., Höschl, P., Sitter, H., ... Lischka, K. (1996). Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling. Inorganic Materials, 32(8), 836-839.

Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling. / Belas, E.; Franc, J.; Grill, R.; Tóth, A.; Höschl, P.; Sitter, H.; Moravec, P.; Lischka, K.

In: Inorganic Materials, Vol. 32, No. 8, 08.1996, p. 836-839.

Research output: Contribution to journalArticle

Belas, E, Franc, J, Grill, R, Tóth, A, Höschl, P, Sitter, H, Moravec, P & Lischka, K 1996, 'Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling', Inorganic Materials, vol. 32, no. 8, pp. 836-839.
Belas, E. ; Franc, J. ; Grill, R. ; Tóth, A. ; Höschl, P. ; Sitter, H. ; Moravec, P. ; Lischka, K. / Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling. In: Inorganic Materials. 1996 ; Vol. 32, No. 8. pp. 836-839.
@article{de6d79fe312c46ad8da303d9d8333ea9,
title = "Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling",
abstract = "The parameters of p-n junctions produced by ion-beam milling of the p-Cd0.8Hg0.2Te surface were assessed by means of electron-beam-induced-current imaging. The mechanism responsible for formation of the n-type layer is discussed in terms of the diffusion of mercury interstitials produced at the ion-milled surface. The proposed technique is shown to yield high-quality materials suitable for fabrication of photoresistors and SPRITE detectors.",
author = "E. Belas and J. Franc and R. Grill and A. T{\'o}th and P. H{\"o}schl and H. Sitter and P. Moravec and K. Lischka",
year = "1996",
month = "8",
language = "English",
volume = "32",
pages = "836--839",
journal = "Inorganic Materials",
issn = "0020-1685",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "8",

}

TY - JOUR

T1 - Minority-Carrier Diffusion Length at p-n Junctions Produced in p-Cd0.8Hg0.2Te by Ion-Beam Milling

AU - Belas, E.

AU - Franc, J.

AU - Grill, R.

AU - Tóth, A.

AU - Höschl, P.

AU - Sitter, H.

AU - Moravec, P.

AU - Lischka, K.

PY - 1996/8

Y1 - 1996/8

N2 - The parameters of p-n junctions produced by ion-beam milling of the p-Cd0.8Hg0.2Te surface were assessed by means of electron-beam-induced-current imaging. The mechanism responsible for formation of the n-type layer is discussed in terms of the diffusion of mercury interstitials produced at the ion-milled surface. The proposed technique is shown to yield high-quality materials suitable for fabrication of photoresistors and SPRITE detectors.

AB - The parameters of p-n junctions produced by ion-beam milling of the p-Cd0.8Hg0.2Te surface were assessed by means of electron-beam-induced-current imaging. The mechanism responsible for formation of the n-type layer is discussed in terms of the diffusion of mercury interstitials produced at the ion-milled surface. The proposed technique is shown to yield high-quality materials suitable for fabrication of photoresistors and SPRITE detectors.

UR - http://www.scopus.com/inward/record.url?scp=2742542194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2742542194&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:2742542194

VL - 32

SP - 836

EP - 839

JO - Inorganic Materials

JF - Inorganic Materials

SN - 0020-1685

IS - 8

ER -