Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

N. G. Galkin, L. Dózsa, E. A. Chusovitin, B. Pécz, L. Dobos

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

CrSi2 nanocrystals (NC1) were grown by reactive deposition epitaxy of Cr at 550 °C. After deposition the Cr is localized in about 20-30 nm dots on the Si surface. The NCs were covered by silicon cap grown by molecular beam epitaxy at 700 °C. The redistribution of NCs in the silicon cap was investigated by transmission electron microscopy and atomic force microscopy. The NCs are partly localized at the deposition depth, and partly migrate near the surface. A new migration mechanism of the CrSi 2 NCs is observed, they are transferred from the bulk toward the surface through nanopipes formed in the silicon cap. The redistribution of CrSi2 NCs strongly depends on Cr deposition rate and on the cap growth temperature.

Original languageEnglish
Pages (from-to)7331-7334
Number of pages4
JournalApplied Surface Science
Volume256
Issue number23
DOIs
Publication statusPublished - Sep 15 2010

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Silicon
Nanocrystals
Growth temperature
Deposition rates
Epitaxial growth
Molecular beam epitaxy
Atomic force microscopy
Transmission electron microscopy

Keywords

  • Chromium disilicide
  • Defects in Si
  • Diffusion of Cr in silicon
  • Quantum dots
  • Si cap growth

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Migration of CrSi2 nanocrystals through nanopipes in the silicon cap. / Galkin, N. G.; Dózsa, L.; Chusovitin, E. A.; Pécz, B.; Dobos, L.

In: Applied Surface Science, Vol. 256, No. 23, 15.09.2010, p. 7331-7334.

Research output: Contribution to journalArticle

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AU - Dobos, L.

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