Microwave noise in unipolar diodes with nanometric barriers

J. Liberis, A. Matulionis, P. Sakalas, R. Saltis, L. Dozsa, B. Szentpali, V. Van Tuyen, H. L. Hartnagel, K. Mutamba, A. Sigurdardottir, A. Vogt

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Microwave noise of GaAs planar-doped barrier diodes is investigated over a wide range of bias. The transition from partially suppressed shot noise to hot-electron intervalley-transfer noise dominating at high is observed.

Original languageEnglish
Pages67-70
Number of pages4
Publication statusPublished - Dec 1 1997
EventProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium
Duration: Jul 14 1997Jul 18 1997

Other

OtherProceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations
CityLeuven, Belgium
Period7/14/977/18/97

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Liberis, J., Matulionis, A., Sakalas, P., Saltis, R., Dozsa, L., Szentpali, B., Van Tuyen, V., Hartnagel, H. L., Mutamba, K., Sigurdardottir, A., & Vogt, A. (1997). Microwave noise in unipolar diodes with nanometric barriers. 67-70. Paper presented at Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations, Leuven, Belgium, .