Microwave noise of GaAs planar-doped barrier diodes is investigated over a wide range of bias. The transition from partially suppressed shot noise to hot-electron intervalley-transfer noise dominating at high is observed.
|Number of pages||4|
|Publication status||Published - Dec 1 1997|
|Event||Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations - Leuven, Belgium|
Duration: Jul 14 1997 → Jul 18 1997
|Other||Proceedings of the 1997 14th International Conference on Noise in Physical Systems and 1/f Fluctuations|
|Period||7/14/97 → 7/18/97|
ASJC Scopus subject areas