Microtopology of terrace risers and treads on solution-grown GaAs(001) vicinal surfaces

T. Marek, H. P. Strunk, H. Weishart, E. Bauser

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Abstract

Reflection electron microscopy reveals that the risers and treads of the terrace growth surface of solution grown GaAs(001) are characterized by a network of growth steps. The different local slopes of treads and risers are primarily caused by corresponding variation of the mesh size. At a growth temperature between 700 and 715°C, two sets of growth steps can be discriminated, which we term orientation steps (height around 2.8 nm) and exchange steps (height up to a few 0.28 nm). Details in this network indicate that, in addition to the direct transport of growth species from the solution to the growth steps, diffusion of adatoms at the liquid/solid interface is active.

Original languageEnglish
Pages (from-to)14-18
Number of pages5
JournalJournal of Crystal Growth
Volume134
Issue number1-2
DOIs
Publication statusPublished - Nov 1993

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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