Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

L. Tóth, B. Pécz, Zs Czigány, K. Amimer, A. Georgakilas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Molecular beam epitaxy using a radio-frequency nitrogen plasma source was applied for the growth of GaN films on (111) and (001) faces of GaAs wafers. The structural assessment by TEM of the grown films revealed that hexagonal phase with columnar morphology has formed on (111) substrates. In contrast to that, depending on the actual deposition parameters, both hexagonal and cubic polytype could be grown on (001) face of GaAs. Nitrogen rich conditions before and during deposition favoured the hexagonal phase, while stoichiometric N/Ga ratio and the lack of substrate nitridation resulted in the cubic structure. Several epitaxial orientation relationships for the individual cases have been determined and discussed.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Pages999-1002
Number of pages4
ISBN (Print)9780878499205
DOIs
Publication statusPublished - Jan 1 2003
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Publication series

NameMaterials Science Forum
Volume433-436
ISSN (Print)0255-5476

Conference

ConferenceProceedings of the 4th European Conference on Silicon Carbide and Related Materials
CountrySweden
CityLinkoping
Period9/2/029/5/02

    Fingerprint

Keywords

  • GaN
  • Molecular Beam Epitaxy
  • Transmission Electron Microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tóth, L., Pécz, B., Czigány, Z., Amimer, K., & Georgakilas, A. (2003). Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 999-1002). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/msf.433-436.999