Microstructure of diamond-SiC nanocomposites determined by X-ray line profile analysis

J. Gubicza, T. Ungár, Y. Wang, G. Voronin, C. Pantea, T. W. Zerda

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Diamond composites with nanosize diamond crystals and nanosize SiC matrix were obtained at 8 GPa and temperatures varied between 1800 and 2000 °C. Multiple Whole Profile fitting method applied to X-ray diffractograms of sintered composites provided information on crystallite size and population of dislocations. When the temperature was increased at a constant pressure, it led to a growth of crystallite sizes in both phases and reduced population of dislocations. Porosity was limiting hardness of the specimens indicating importance of sample preparation prior to sintering nanosize diamond powders.

Original languageEnglish
Pages (from-to)1452-1456
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number9
DOIs
Publication statusPublished - Sep 2006

Fingerprint

Diamond
Diamonds
Nanocomposites
nanocomposites
diamonds
Crystallite size
X rays
microstructure
Microstructure
profiles
x rays
composite materials
Composite materials
Powders
sintering
Sintering
hardness
Porosity
Hardness
porosity

Keywords

  • Diamond crystal
  • High pressure high temperature
  • SiC
  • Superhard materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Microstructure of diamond-SiC nanocomposites determined by X-ray line profile analysis. / Gubicza, J.; Ungár, T.; Wang, Y.; Voronin, G.; Pantea, C.; Zerda, T. W.

In: Diamond and Related Materials, Vol. 15, No. 9, 09.2006, p. 1452-1456.

Research output: Contribution to journalArticle

Gubicza, J. ; Ungár, T. ; Wang, Y. ; Voronin, G. ; Pantea, C. ; Zerda, T. W. / Microstructure of diamond-SiC nanocomposites determined by X-ray line profile analysis. In: Diamond and Related Materials. 2006 ; Vol. 15, No. 9. pp. 1452-1456.
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