Abstract
Diamond composites with nanosize diamond crystals and nanosize SiC matrix were obtained at 8 GPa and temperatures varied between 1800 and 2000 °C. Multiple Whole Profile fitting method applied to X-ray diffractograms of sintered composites provided information on crystallite size and population of dislocations. When the temperature was increased at a constant pressure, it led to a growth of crystallite sizes in both phases and reduced population of dislocations. Porosity was limiting hardness of the specimens indicating importance of sample preparation prior to sintering nanosize diamond powders.
| Original language | English |
|---|---|
| Pages (from-to) | 1452-1456 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 15 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Sep 1 2006 |
Keywords
- Diamond crystal
- High pressure high temperature
- SiC
- Superhard materials
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
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Cite this
Gubicza, J., Ungár, T., Wang, Y., Voronin, G., Pantea, C., & Zerda, T. W. (2006). Microstructure of diamond-SiC nanocomposites determined by X-ray line profile analysis. Diamond and Related Materials, 15(9), 1452-1456. https://doi.org/10.1016/j.diamond.2005.10.064