Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition

K. Järrendahl, I. Ivanov, J. E. Sundgren, G. Radnóczi, Z. Czigány, J. E. Greene

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Microstructure evolution in amorphous Ge/Si multilayers grown by dual-target dc magnetron sputtering was investigated by cross-sectional transmission electron microscopy, x-ray diffraction, and growth simulations. In films grown under low intensity ion-irradiation conditions, the structure is columnar with low-density regions along column boundaries where layer intermixing was observed. By increasing the low-irradiation intensity (controlled by an applied negative substrate-bias), structures with smooth and well-defined layers could be grown. This was achieved at bias voltages between 80 and 140 V, depending on the sputtering gas pressure. As the ion-irradiation intensity is further increased, ion-induced intermixing degrades the layer interfaces and finally an amorphous Sil-xGex alloy forms. The combination of x-ray diffraction measurements and reflectivity calculations reveals an asymmetry between the Ge/Si and Si/Ge interface widths due, primarily, to a corresponding asymmetry in incident particle energies during the growth of alternate layers.

Original languageEnglish
Pages (from-to)1806-1815
Number of pages10
JournalJournal of Materials Research
Volume12
Issue number7
Publication statusPublished - Jul 1997

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Sputter deposition
Ion bombardment
Multilayers
Diffraction
ion irradiation
X rays
microstructure
Microstructure
x ray diffraction
Bias voltage
asymmetry
Magnetron sputtering
Sputtering
Boundary layers
Gases
Irradiation
Ions
Transmission electron microscopy
particle energy
gas pressure

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition. / Järrendahl, K.; Ivanov, I.; Sundgren, J. E.; Radnóczi, G.; Czigány, Z.; Greene, J. E.

In: Journal of Materials Research, Vol. 12, No. 7, 07.1997, p. 1806-1815.

Research output: Contribution to journalArticle

Järrendahl, K. ; Ivanov, I. ; Sundgren, J. E. ; Radnóczi, G. ; Czigány, Z. ; Greene, J. E. / Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition. In: Journal of Materials Research. 1997 ; Vol. 12, No. 7. pp. 1806-1815.
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