Microstructural characterization of the oxide scale on nitride bonded SiC-ceramics

E. Horváth, Gy Zsíros, A. L. Tóth, I. Sajó, P. Arató, J. Pfeifer

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The microstructure of the oxide scale formed at 1510 °C by oxidation of silicon nitride-bonded SiC-ceramics was studied by scanning electron microscopy (SEM). Etching by diluted HF etchants was used to help microstructural observation. This method revealed individual cristobalite crystallites as well as interfaces or interlayers between silica and non-silica phases. The ceramics-scale interface was covered by cristobalite crystallites showing that the devitrification of oxide scale begins here. Crystallites grown on SiC were smaller than those grown on binding phase. A thin HF-soluble interlayer was observed between SiC grains and cristobalite. No interlayer was found between cristobalite and oxynitride-type binding phases. The applied etching procedure gave supplementary information on the cracking, too. Partial etching by diluted HF delineated cracks in the scale. These cracks originate in the cristobalite and extend nearly perpendicularly to the substrate through the whole glassy part of the scale.

Original languageEnglish
Pages (from-to)151-155
Number of pages5
JournalCeramics International
Volume34
Issue number1
DOIs
Publication statusPublished - Jan 2008

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Crystallites
Nitrides
Silicon Dioxide
Oxides
Etching
Cracks
Silicon nitride
Silica
Oxidation
Microstructure
Scanning electron microscopy
Substrates

Keywords

  • A. Firing
  • B. Microstructure final
  • D. SiC
  • Oxide scale

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Microstructural characterization of the oxide scale on nitride bonded SiC-ceramics. / Horváth, E.; Zsíros, Gy; Tóth, A. L.; Sajó, I.; Arató, P.; Pfeifer, J.

In: Ceramics International, Vol. 34, No. 1, 01.2008, p. 151-155.

Research output: Contribution to journalArticle

@article{c6d09e3e28884c5cb7fb072eec78015a,
title = "Microstructural characterization of the oxide scale on nitride bonded SiC-ceramics",
abstract = "The microstructure of the oxide scale formed at 1510 °C by oxidation of silicon nitride-bonded SiC-ceramics was studied by scanning electron microscopy (SEM). Etching by diluted HF etchants was used to help microstructural observation. This method revealed individual cristobalite crystallites as well as interfaces or interlayers between silica and non-silica phases. The ceramics-scale interface was covered by cristobalite crystallites showing that the devitrification of oxide scale begins here. Crystallites grown on SiC were smaller than those grown on binding phase. A thin HF-soluble interlayer was observed between SiC grains and cristobalite. No interlayer was found between cristobalite and oxynitride-type binding phases. The applied etching procedure gave supplementary information on the cracking, too. Partial etching by diluted HF delineated cracks in the scale. These cracks originate in the cristobalite and extend nearly perpendicularly to the substrate through the whole glassy part of the scale.",
keywords = "A. Firing, B. Microstructure final, D. SiC, Oxide scale",
author = "E. Horv{\'a}th and Gy Zs{\'i}ros and T{\'o}th, {A. L.} and I. Saj{\'o} and P. Arat{\'o} and J. Pfeifer",
year = "2008",
month = "1",
doi = "10.1016/j.ceramint.2006.09.003",
language = "English",
volume = "34",
pages = "151--155",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - Microstructural characterization of the oxide scale on nitride bonded SiC-ceramics

AU - Horváth, E.

AU - Zsíros, Gy

AU - Tóth, A. L.

AU - Sajó, I.

AU - Arató, P.

AU - Pfeifer, J.

PY - 2008/1

Y1 - 2008/1

N2 - The microstructure of the oxide scale formed at 1510 °C by oxidation of silicon nitride-bonded SiC-ceramics was studied by scanning electron microscopy (SEM). Etching by diluted HF etchants was used to help microstructural observation. This method revealed individual cristobalite crystallites as well as interfaces or interlayers between silica and non-silica phases. The ceramics-scale interface was covered by cristobalite crystallites showing that the devitrification of oxide scale begins here. Crystallites grown on SiC were smaller than those grown on binding phase. A thin HF-soluble interlayer was observed between SiC grains and cristobalite. No interlayer was found between cristobalite and oxynitride-type binding phases. The applied etching procedure gave supplementary information on the cracking, too. Partial etching by diluted HF delineated cracks in the scale. These cracks originate in the cristobalite and extend nearly perpendicularly to the substrate through the whole glassy part of the scale.

AB - The microstructure of the oxide scale formed at 1510 °C by oxidation of silicon nitride-bonded SiC-ceramics was studied by scanning electron microscopy (SEM). Etching by diluted HF etchants was used to help microstructural observation. This method revealed individual cristobalite crystallites as well as interfaces or interlayers between silica and non-silica phases. The ceramics-scale interface was covered by cristobalite crystallites showing that the devitrification of oxide scale begins here. Crystallites grown on SiC were smaller than those grown on binding phase. A thin HF-soluble interlayer was observed between SiC grains and cristobalite. No interlayer was found between cristobalite and oxynitride-type binding phases. The applied etching procedure gave supplementary information on the cracking, too. Partial etching by diluted HF delineated cracks in the scale. These cracks originate in the cristobalite and extend nearly perpendicularly to the substrate through the whole glassy part of the scale.

KW - A. Firing

KW - B. Microstructure final

KW - D. SiC

KW - Oxide scale

UR - http://www.scopus.com/inward/record.url?scp=35548960485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35548960485&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2006.09.003

DO - 10.1016/j.ceramint.2006.09.003

M3 - Article

VL - 34

SP - 151

EP - 155

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

IS - 1

ER -