Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Nikolay G. Galkin, Konstantin N. Galkin, Sergey A. Dotsenko, Igor M. Chernov, Andrei M. Maslov, L. Dózsa, B. Pécz, Z. Oszáth, I. Cora, D. B. Migas, R. Kudrawiec, J. Misiewicz

Research output: Contribution to journalConference article


Thin (50-90 m) non-doped and doped (by Al atoms) Mg2Sn0.6Si0.4 and Mg2Sn0.4Si0.6films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 °C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-Type wafers with 45 Ω-cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg2Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships:hex-Mg2Sn(300)|| Si(111), hex-Mg2Sn[001]|| Si[-112] and hex-Mg2Sn[030]||Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg2Si were also observed inside hex-Mg2Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with no= 3.59 ± 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions.

Original languageEnglish
Article number1017604
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Jan 1 2017
EventAsia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics - Khabarovsk, Russian Federation
Duration: Oct 11 2016 → …



  • Band structure
  • Mg stannide
  • Optical properties
  • Silicide
  • Structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Galkin, N. G., Galkin, K. N., Dotsenko, S. A., Chernov, I. M., Maslov, A. M., Dózsa, L., Pécz, B., Oszáth, Z., Cora, I., Migas, D. B., Kudrawiec, R., & Misiewicz, J. (2017). Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics. Proceedings of SPIE - The International Society for Optical Engineering, 10176, [1017604].