Methods for optical modeling and cross-checking in ellipsometry and scatterometry

P. Petrik, B. Fodor, E. Agocs, P. Kozma, J. Nador, N. Kumar, J. Endres, G. Juhasz, C. Major, S. F. Pereira, T. Lohner, H. P. Urbach, B. Bodermann, M. Fried

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Indirect optical methods like ellipsometry or scatterometry require an optical model to calculate the response of the system, and to fit the parameters in order to minimize the difference between the calculated and measured values. The most common problem of optical modeling is that the measured structures and materials turn out to be more complex in reality than the simplified optical models used as first attempts to fit the measurement. The complexity of the optical models can be increased by introducing additional parameters, if they (1) are physically relevant, (2) improve the fit quality, (3) don't correlate with other parameters. The sensitivity of the parameters can be determined by mathematical analysis, but the accuracy has to be validated by reference methods. In this work some modeling and verification aspects of ellipsometry and optical scatterometry will be discussed and shown for a range of materials (semiconductors, dielectrics, composite materials), structures (damage and porosity profiles, gratings and other photonic structures, surface roughness) and cross-checking methods (atomic force microscopy, electron microscopy, x-ray diffraction, ion beam analysis). The high-sensitivity, high-throughput, in situ or in line capabilities of the optical methods will be demonstrated by different applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9526
ISBN (Print)9781628416862
DOIs
Publication statusPublished - 2015
EventModeling Aspects in Optical Metrology V - Munich, Germany
Duration: Jun 23 2015Jun 25 2015

Other

OtherModeling Aspects in Optical Metrology V
CountryGermany
CityMunich
Period6/23/156/25/15

Fingerprint

Optical Modeling
Ellipsometry
Scatterometry
ellipsometry
optics
Photonics
Ion beams
Electron microscopy
applications of mathematics
sensitivity
Atomic force microscopy
Porosity
Diffraction
Surface roughness
Throughput
Semiconductor materials
X rays
electron microscopy
surface roughness
x ray diffraction

Keywords

  • Comparative Study
  • Cross-checking
  • Ellipsometry
  • Optical characterization
  • Scatterometry
  • Thin films

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Petrik, P., Fodor, B., Agocs, E., Kozma, P., Nador, J., Kumar, N., ... Fried, M. (2015). Methods for optical modeling and cross-checking in ellipsometry and scatterometry. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9526). [95260S] SPIE. https://doi.org/10.1117/12.2184833

Methods for optical modeling and cross-checking in ellipsometry and scatterometry. / Petrik, P.; Fodor, B.; Agocs, E.; Kozma, P.; Nador, J.; Kumar, N.; Endres, J.; Juhasz, G.; Major, C.; Pereira, S. F.; Lohner, T.; Urbach, H. P.; Bodermann, B.; Fried, M.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9526 SPIE, 2015. 95260S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Petrik, P, Fodor, B, Agocs, E, Kozma, P, Nador, J, Kumar, N, Endres, J, Juhasz, G, Major, C, Pereira, SF, Lohner, T, Urbach, HP, Bodermann, B & Fried, M 2015, Methods for optical modeling and cross-checking in ellipsometry and scatterometry. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9526, 95260S, SPIE, Modeling Aspects in Optical Metrology V, Munich, Germany, 6/23/15. https://doi.org/10.1117/12.2184833
Petrik P, Fodor B, Agocs E, Kozma P, Nador J, Kumar N et al. Methods for optical modeling and cross-checking in ellipsometry and scatterometry. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9526. SPIE. 2015. 95260S https://doi.org/10.1117/12.2184833
Petrik, P. ; Fodor, B. ; Agocs, E. ; Kozma, P. ; Nador, J. ; Kumar, N. ; Endres, J. ; Juhasz, G. ; Major, C. ; Pereira, S. F. ; Lohner, T. ; Urbach, H. P. ; Bodermann, B. ; Fried, M. / Methods for optical modeling and cross-checking in ellipsometry and scatterometry. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9526 SPIE, 2015.
@inproceedings{181365244cbe46519ad11bf55f463702,
title = "Methods for optical modeling and cross-checking in ellipsometry and scatterometry",
abstract = "Indirect optical methods like ellipsometry or scatterometry require an optical model to calculate the response of the system, and to fit the parameters in order to minimize the difference between the calculated and measured values. The most common problem of optical modeling is that the measured structures and materials turn out to be more complex in reality than the simplified optical models used as first attempts to fit the measurement. The complexity of the optical models can be increased by introducing additional parameters, if they (1) are physically relevant, (2) improve the fit quality, (3) don't correlate with other parameters. The sensitivity of the parameters can be determined by mathematical analysis, but the accuracy has to be validated by reference methods. In this work some modeling and verification aspects of ellipsometry and optical scatterometry will be discussed and shown for a range of materials (semiconductors, dielectrics, composite materials), structures (damage and porosity profiles, gratings and other photonic structures, surface roughness) and cross-checking methods (atomic force microscopy, electron microscopy, x-ray diffraction, ion beam analysis). The high-sensitivity, high-throughput, in situ or in line capabilities of the optical methods will be demonstrated by different applications.",
keywords = "Comparative Study, Cross-checking, Ellipsometry, Optical characterization, Scatterometry, Thin films",
author = "P. Petrik and B. Fodor and E. Agocs and P. Kozma and J. Nador and N. Kumar and J. Endres and G. Juhasz and C. Major and Pereira, {S. F.} and T. Lohner and Urbach, {H. P.} and B. Bodermann and M. Fried",
year = "2015",
doi = "10.1117/12.2184833",
language = "English",
isbn = "9781628416862",
volume = "9526",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",

}

TY - GEN

T1 - Methods for optical modeling and cross-checking in ellipsometry and scatterometry

AU - Petrik, P.

AU - Fodor, B.

AU - Agocs, E.

AU - Kozma, P.

AU - Nador, J.

AU - Kumar, N.

AU - Endres, J.

AU - Juhasz, G.

AU - Major, C.

AU - Pereira, S. F.

AU - Lohner, T.

AU - Urbach, H. P.

AU - Bodermann, B.

AU - Fried, M.

PY - 2015

Y1 - 2015

N2 - Indirect optical methods like ellipsometry or scatterometry require an optical model to calculate the response of the system, and to fit the parameters in order to minimize the difference between the calculated and measured values. The most common problem of optical modeling is that the measured structures and materials turn out to be more complex in reality than the simplified optical models used as first attempts to fit the measurement. The complexity of the optical models can be increased by introducing additional parameters, if they (1) are physically relevant, (2) improve the fit quality, (3) don't correlate with other parameters. The sensitivity of the parameters can be determined by mathematical analysis, but the accuracy has to be validated by reference methods. In this work some modeling and verification aspects of ellipsometry and optical scatterometry will be discussed and shown for a range of materials (semiconductors, dielectrics, composite materials), structures (damage and porosity profiles, gratings and other photonic structures, surface roughness) and cross-checking methods (atomic force microscopy, electron microscopy, x-ray diffraction, ion beam analysis). The high-sensitivity, high-throughput, in situ or in line capabilities of the optical methods will be demonstrated by different applications.

AB - Indirect optical methods like ellipsometry or scatterometry require an optical model to calculate the response of the system, and to fit the parameters in order to minimize the difference between the calculated and measured values. The most common problem of optical modeling is that the measured structures and materials turn out to be more complex in reality than the simplified optical models used as first attempts to fit the measurement. The complexity of the optical models can be increased by introducing additional parameters, if they (1) are physically relevant, (2) improve the fit quality, (3) don't correlate with other parameters. The sensitivity of the parameters can be determined by mathematical analysis, but the accuracy has to be validated by reference methods. In this work some modeling and verification aspects of ellipsometry and optical scatterometry will be discussed and shown for a range of materials (semiconductors, dielectrics, composite materials), structures (damage and porosity profiles, gratings and other photonic structures, surface roughness) and cross-checking methods (atomic force microscopy, electron microscopy, x-ray diffraction, ion beam analysis). The high-sensitivity, high-throughput, in situ or in line capabilities of the optical methods will be demonstrated by different applications.

KW - Comparative Study

KW - Cross-checking

KW - Ellipsometry

KW - Optical characterization

KW - Scatterometry

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84938925201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938925201&partnerID=8YFLogxK

U2 - 10.1117/12.2184833

DO - 10.1117/12.2184833

M3 - Conference contribution

SN - 9781628416862

VL - 9526

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

ER -