Methods comparing peculiarities of surface-relief recording in amorphous chalcogenides

Roland Bohdan, Sandor Molnar, Sandor Kokenyesi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Direct surface relief recording in amorphous chalcogenide semiconductors like As20Se80 and other compositions from As(Ge)-S(Se) systems essentially depends on the chemical composition, technology, and the recording conditions, resulting discrepancies in the results and interpretations. We have developed a method of direct comparison of the relief height and form in a combined thin film samples made of the reference and investigated compositions, as well as simple way of determining the efficiency of mass transport at surface relief recording. Selection of the a-Se as reference layer enables consideration of the possible role of composition, temperature, polarization in the recording process for any other chalcogenide or other material, which possess similar relief recording effects.

Original languageEnglish
Pages (from-to)2186-2190
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume212
Issue number10
DOIs
Publication statusPublished - Oct 1 2015

Keywords

  • AsS
  • AsSe
  • chalcogenide glasses
  • light-stimulated mass transport
  • optical recording
  • surface relief

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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