Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Pécz, J. F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17 Al0.83 N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700°C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700°C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

Original languageEnglish
Article number263515
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - Jun 28 2010

Fingerprint

sinking
high electron mobility transistors
oxygen
metals
annealing
capacitance
transconductance
iridium
threshold voltage
interlayers
grain boundaries
transmission electron microscopy
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. / Ostermaier, C.; Pozzovivo, G.; Basnar, B.; Schrenk, W.; Schmid, M.; Tóth, L.; Pécz, B.; Carlin, J. F.; Gonschorek, M.; Grandjean, N.; Strasser, G.; Pogany, D.; Kuzmik, J.

In: Applied Physics Letters, Vol. 96, No. 26, 263515, 28.06.2010.

Research output: Contribution to journalArticle

Ostermaier, C, Pozzovivo, G, Basnar, B, Schrenk, W, Schmid, M, Tóth, L, Pécz, B, Carlin, JF, Gonschorek, M, Grandjean, N, Strasser, G, Pogany, D & Kuzmik, J 2010, 'Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors', Applied Physics Letters, vol. 96, no. 26, 263515. https://doi.org/10.1063/1.3458700
Ostermaier, C. ; Pozzovivo, G. ; Basnar, B. ; Schrenk, W. ; Schmid, M. ; Tóth, L. ; Pécz, B. ; Carlin, J. F. ; Gonschorek, M. ; Grandjean, N. ; Strasser, G. ; Pogany, D. ; Kuzmik, J. / Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. In: Applied Physics Letters. 2010 ; Vol. 96, No. 26.
@article{77f882b67ada4149b9fbeced05e9bef3,
title = "Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors",
abstract = "We report on an annealing-induced {"}gate sinking{"} effect in a 2-nm-thin In0.17 Al0.83 N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700°C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700°C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.",
author = "C. Ostermaier and G. Pozzovivo and B. Basnar and W. Schrenk and M. Schmid and L. T{\'o}th and B. P{\'e}cz and Carlin, {J. F.} and M. Gonschorek and N. Grandjean and G. Strasser and D. Pogany and J. Kuzmik",
year = "2010",
month = "6",
day = "28",
doi = "10.1063/1.3458700",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

AU - Ostermaier, C.

AU - Pozzovivo, G.

AU - Basnar, B.

AU - Schrenk, W.

AU - Schmid, M.

AU - Tóth, L.

AU - Pécz, B.

AU - Carlin, J. F.

AU - Gonschorek, M.

AU - Grandjean, N.

AU - Strasser, G.

AU - Pogany, D.

AU - Kuzmik, J.

PY - 2010/6/28

Y1 - 2010/6/28

N2 - We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17 Al0.83 N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700°C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700°C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

AB - We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17 Al0.83 N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700°C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700°C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

UR - http://www.scopus.com/inward/record.url?scp=77954328434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954328434&partnerID=8YFLogxK

U2 - 10.1063/1.3458700

DO - 10.1063/1.3458700

M3 - Article

AN - SCOPUS:77954328434

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 263515

ER -