Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

C. Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, M. Schmid, L. Tóth, B. Ṕcz, J. F. Carlin, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

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Abstract

We report on an annealing-induced "gate sinking" effect in a 2-nm-thin In0.17 Al0.83 N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700°C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700°C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

Original languageEnglish
Article number263515
JournalApplied Physics Letters
Volume96
Issue number26
DOIs
Publication statusPublished - Jun 28 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Schmid, M., Tóth, L., Ṕcz, B., Carlin, J. F., Gonschorek, M., Grandjean, N., Strasser, G., Pogany, D., & Kuzmik, J. (2010). Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors. Applied Physics Letters, 96(26), [263515]. https://doi.org/10.1063/1.3458700